2022
DOI: 10.1002/adem.202101502
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Effects of Al, Y, and Zn Additions on the Microstructure and Mechanical Properties of Mg−3Li Alloy

Abstract: The influence of Al, Y, and Zn additions on the microstructure and mechanical properties of Mg−3Li alloy is investigated. It is revealed that Al and Y form the Al2Y phase that can refine α‐Mg grains. Y and Zn form the 18R long‐period‐stacking‐ordered (LPSO) structure phase that can coordinate deformation. In addition, the formed SFs can hinder dislocation slip. However, the Mg24Y5 phase weakens the grain boundaries. After solid solution at 520 °C, the Al2Y phase and LPSO phase do not change. The Mg24Y5 phase g… Show more

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Cited by 8 publications
(6 citation statements)
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“…A simplified parallel‐plate capacitor model is introduced to describe the charge transfer and induced voltage in the F‐TENG. [ 36 ] Accordingly, the short‐circuit charge ( Q sc ) and open‐circuit voltage ( V oc ) are expressed as: Qsc()x=badbreak−σo()x·S1+wwxgoodbreak−3·σS2()0goodbreak≤0.33emx0.33em0.33emw$$\begin{equation}{Q}_{{\mathrm{sc}}} \left( x \right){\mathrm{\, = \,\ }} - \frac{{{\sigma }_o\left( x \right) \cdot S}}{{{\mathrm{1 + }}\frac{w}{{w - x}}}} - \frac{{{\mathrm{3}} \cdot \sigma S}}{{\mathrm{2}}}\left( {{\mathrm{0\ }} \le \ x\ \le \ w} \right)\end{equation}$$ Qsc()x=σo()x·S1+wxw0.33embadbreak−3·σS2()w0.33emgoodbreak≤0.33emx0.33em2w$$\begin{equation}{Q}_{{\mathrm{sc}}} \left( x \right){\mathrm{\, = \,}}\frac{{{\sigma }_o\left( x \right) \cdot S}}{{{\mathrm{1 + }}\frac{w}{{x - w}}}}\ - \frac{{{\mathrm{3}} \cdot \sigma S}}{{\mathrm{2}}}\left( {w\ \le \ x\ \le {\mathrm{\ 2}}w} \right)\end{equation}$$ Voc()x=Qsc()xC$$\begin{equation}{V}_{{\mathrm{oc}}} \left( x \right){\mathrm{\, =\, }}\frac{{{Q}_{{\mathrm{sc}}}\left( x \right)}}{C}\end{equation}$$where S is the area of freestanding electrode, σ is the charge density of PTFE film surface, σ 0 ( x ) is the charge density of overlapped area on freestanding electrodes, w is the finger width, x is the distance of the freestanding electrode away from the initial state, and C is the capacitance between electrodes A and B.…”
Section: Resultsmentioning
confidence: 99%
“…A simplified parallel‐plate capacitor model is introduced to describe the charge transfer and induced voltage in the F‐TENG. [ 36 ] Accordingly, the short‐circuit charge ( Q sc ) and open‐circuit voltage ( V oc ) are expressed as: Qsc()x=badbreak−σo()x·S1+wwxgoodbreak−3·σS2()0goodbreak≤0.33emx0.33em0.33emw$$\begin{equation}{Q}_{{\mathrm{sc}}} \left( x \right){\mathrm{\, = \,\ }} - \frac{{{\sigma }_o\left( x \right) \cdot S}}{{{\mathrm{1 + }}\frac{w}{{w - x}}}} - \frac{{{\mathrm{3}} \cdot \sigma S}}{{\mathrm{2}}}\left( {{\mathrm{0\ }} \le \ x\ \le \ w} \right)\end{equation}$$ Qsc()x=σo()x·S1+wxw0.33embadbreak−3·σS2()w0.33emgoodbreak≤0.33emx0.33em2w$$\begin{equation}{Q}_{{\mathrm{sc}}} \left( x \right){\mathrm{\, = \,}}\frac{{{\sigma }_o\left( x \right) \cdot S}}{{{\mathrm{1 + }}\frac{w}{{x - w}}}}\ - \frac{{{\mathrm{3}} \cdot \sigma S}}{{\mathrm{2}}}\left( {w\ \le \ x\ \le {\mathrm{\ 2}}w} \right)\end{equation}$$ Voc()x=Qsc()xC$$\begin{equation}{V}_{{\mathrm{oc}}} \left( x \right){\mathrm{\, =\, }}\frac{{{Q}_{{\mathrm{sc}}}\left( x \right)}}{C}\end{equation}$$where S is the area of freestanding electrode, σ is the charge density of PTFE film surface, σ 0 ( x ) is the charge density of overlapped area on freestanding electrodes, w is the finger width, x is the distance of the freestanding electrode away from the initial state, and C is the capacitance between electrodes A and B.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 4e displays the reported performance of 2D‐based phototransistors with gate dielectric in respects of responsivity and response time. [ 2,13,29–39 ] While the photoswitching speed of PPR transistors with gate dielectric is typically limited by PPC, except for a few FETs, our NPR transistor device seems to demonstrate quite high switching performances and responsivity exceeding 5000 A W −1 . [ 38,39 ] PN or Schottky diodes are normally faster than phototransistors in photoresponse but tend to have lower responsivity.…”
Section: Resultsmentioning
confidence: 99%
“…[ 32,33 ] Some researchers have developed sensing strategies that track the target's movement by analyzing the frequency of electrical pulses. [ 34 ] The principle of this approach bears similarity to those used in heart rate and grating speed measurements. Recent research in TENG has delved into utilizing machine learning and local feature recognition for signal analysis.…”
Section: Introductionmentioning
confidence: 99%