“…A simplified parallel‐plate capacitor model is introduced to describe the charge transfer and induced voltage in the F‐TENG. [
36 ] Accordingly, the short‐circuit charge ( Q sc ) and open‐circuit voltage ( V oc ) are expressed as:
where S is the area of freestanding electrode, σ is the charge density of PTFE film surface, σ 0 ( x ) is the charge density of overlapped area on freestanding electrodes, w is the finger width, x is the distance of the freestanding electrode away from the initial state, and C is the capacitance between electrodes A and B.…”