In this Letter, the study of the effect of Al substitution on the upper critical field, B c2 , in Al x Mg 1-x B 2 samples is presented. We find a straightforward correlation between B c2 and the σ−band gap, ∆ σ ., evaluated by point-contact measurements. Up to x=0.2 B c2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of ∆ σ . For larger doping we observed the crossover to the dirty regime driven mostly by the strong decrease of ∆ σ rather than by the increase of the σ-band scattering rate.Superconductivity at 40K in magnesium diboride has been extensively studied since its discovery 1 to these days. The presence of two-bands crossing the Fermi level and having strongly different character 2,3 is well established: two π bands are formed by p z orbitals of boron and are threedimensional, electron-type and weakly coupled with phonons; two σ bands are formed by sp 2 -hybrids orbitals stretched along boron-boron bonds and are two-dimensional, hole-type and strongly coupled with the optical E 2g phonon mode. This peculiar band structure, joined to the fact that impurity interband scattering is inhibited by the different parity of π and σ orbitals, 4 is at the ground of the two-gap superconductivity, evidenced unambiguously for the first time in this compound. The lack of interband scattering yields important consequences in the transport behavior because it prevents the mixing of the σ and π carriers, which maintain their own characteristics. This gives a unique chance to selectively disorder each channel independently and offers many opportunities to tune superconducting and normal properties. Many attempts of selective doping have been carried out. For example, substitution of C in the B site significantly increases upper critical fields, as reported by several groups [5][6][7] suggesting that, in these substituted compounds, the dirty regime is well stabilized. On the other hand, Al substitution of Mg does not give univocal results. In Al doped single crystals, the critical field perpendicular to the ab-planes, , increases with increasing Al concentration, while the one parallel to the ab-planes, , decreases, as observed also in polycrystalline samples. Therefore both the energy gaps, and the scattering rates, vary with the doping determining the regime of conduction (clean or dirty) of each band. Thus the upper critical field must depend on Al doping in a not trivial way and the study of its behavior gives an unique opportunity to investigate the peculiar role of disorder in a two-gap superconductor. This Letter tackles the multifaced subject of transport regimes in Al doped samples. We correlated the upper critical fields, the energy gaps and the scattering rates in a complete set of poly-crystalline Al x Mg 1-x B 2 samples in order to investigate the effect of Al substitution on the conduction regimes of σ and π bands. Dense, clean and hard cylinder shaped samples have been prepared by direct synthesis of pure elements. 16 In order to improve the ...