Effects of Ag Doping and Point Defect on the Magnetism of ZnO

Liu, Q. L.; Hou, Qingyu; Xu, Zhenming; Li, W. L.

doi:10.1007/s10948-018-4926-y

Cited by 3 publications

(3 citation statements)

References 34 publications

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“…The intensity of the XRD peaks decreases due to the La‐induced disorder or due to the degradation of crystallinity by doping. [ 10 ] It is also clear from Figure 1 that upon La doping, with increasing La content, new peaks started appearing. The inset of Figure 1 shows the first minor peak which appeared in the XRD patterns of the doped samples near a diffraction angle of

2 θ = 28.57 °

.…”

Section: Resultsmentioning

confidence: 88%

“…In doping systems like Zn 15 AgO 16 and Zn 14 AgO 16 , it is mentioned that the closer Ag is to Zn vacancy, the smaller the formation energy of the system is, the easier the system is doped, and the more stable the system. [ 10 ] On the other hand, when the solubility limit is significantly exceeded ( x = 0.20), both the lattice constant and crystallites size decrease and the microstrain and defect concentration increase. Compared with our previous investigations, while Sb doping with content of

x = 0.40

being doped in sites of Nb was needed to increase the crystallite size up to 57 nm [ 6 ] and lower the defect concentration to

1.27 \times 10^{11} lines {cm}^{- 2}

, La doping with content of

x = 0.02

in sites of Ba increased the crystallite size up to 65 nm and reduced the defect concentration down to

1.17 \times 10^{11} {lines cm}^{- 2}

.…”

Section: Resultsmentioning

confidence: 99%

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Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Qasrawi

Şahin

Abed

et al. 2020

Physica Status Solidi (b)

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Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1−xLax(Zn1/3Nb2/3)O3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02–0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La‐doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 °C. In the temperature range of 20–120 °C, La doping changes the temperature coefficient of dielectric constants from +30 ppm °C−1 in pure samples to −341 ppm °C−1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.

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2 θ = 28.57 °

.…”

Section: Resultsmentioning

confidence: 88%

x = 0.40

being doped in sites of Nb was needed to increase the crystallite size up to 57 nm [ 6 ] and lower the defect concentration to

1.27 \times 10^{11} lines {cm}^{- 2}

, La doping with content of

x = 0.02

in sites of Ba increased the crystallite size up to 65 nm and reduced the defect concentration down to

1.17 \times 10^{11} {lines cm}^{- 2}

.…”

Section: Resultsmentioning

confidence: 99%

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Qasrawi

Şahin

Abed

et al. 2020

Physica Status Solidi (b)

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“…The V O is proposed as the mechanism responsible for the conductivity instabilities in Ag-doped ZnO. Liu et al [25] studied the effects of Ag doing and point defect on the magnetic mechanism of ZnO. They found that ZnO with Ag Zn and V Zn can achieve room-temperature ferromagnetism.…”

Section: Introductionmentioning

confidence: 99%

The effect of Ag doping and point defects on the electronic structure and photocatalytic properties of ZnO using first-principles

Liu

Hou

2021

Phys. Scr.

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At present, the photocatalytic properties of Ag-doped ZnO have been extensively studied, but the mechanism of Ag-doped ZnO photocatalysis is not fully understood. The effect of intrinsic point defects on the performance and mechanism of Ag-doped ZnO photocatalysis has rarely been studied by theoretical calculations. To solve such problems, first-principle calculations were performed to systematically investigate the effect of Ag doping (AgZn/Agi) and point vacancy (VZn/VO) on the photocatalytic performance and mechanism of ZnO. It was found that the ZnO:Agi+VZn showed the strongest structural stability compared to the three doping methods, ZnO:AgZn+VZn, ZnO:AgZn+VO, and ZnO:Agi+VO. In addition, the doping of interstitial Ag with Zn vacancy shrank the ZnO bandgap to the smallest bandgap width (2.46 eV), thereby broadening the ZnO absorption spectrum into the visible range. The study of the dipole moment, static dielectric constant, and carrier effective mass showed that the ZnO:Agi+VZn exhibited excellent photocatalytic polarization and activity in the visible range. In particular, along the [001] direction, electrons and holes showed stronger mobility, resulting in effective separation and transfer of electron-hole pairs and a reduction in the electron-hole complex rate. The results provided a theoretical reference for in-depth understanding and designing of novel ZnO photocatalysts.

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First-principles study of acceptor Li/Ag/Cu doping and Zn vacancy on the magnetic mechanism of ZnO and the universality of itinerant electrons

Hou

Sha

2021

Materials Today Communications

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Effects of Ag Doping and Point Defect on the Magnetism of ZnO

Cited by 3 publications

References 34 publications

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

The effect of Ag doping and point defects on the electronic structure and photocatalytic properties of ZnO using first-principles

First-principles study of acceptor Li/Ag/Cu doping and Zn vacancy on the magnetic mechanism of ZnO and the universality of itinerant electrons

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Effects of Ag Doping and Point Defect on the Magnetism of ZnO

Cited by 3 publications

References 34 publications

Structural and Dielectric Properties of Ba1−xLax(Zn1/3Nb2/3)O3 Solid Solutions

Structural and Dielectric Properties of Ba1−xLax(Zn1/3Nb2/3)O3 Solid Solutions

The effect of Ag doping and point defects on the electronic structure and photocatalytic properties of ZnO using first-principles

First-principles study of acceptor Li/Ag/Cu doping and Zn vacancy on the magnetic mechanism of ZnO and the universality of itinerant electrons

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Product

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About

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions