Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs

Toshiharu, Marui; Hoshi, Shinichi; Itoh, Makoto; Tamai, Isao; Toda, Fumihiko; Okita, Hideyuki; Sano, Yuichi; Seki, S.

doi:10.1093/ietele/e91-c.7.1009

IEICE Transactions on Electronics

2008

DOI: 10.1093/ietele/e91-c.7.1009

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Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs

Marui Toshiharu

Shinichi Hoshi

Makoto Itoh

et al.

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2009

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“…3 with L g of 0.5 and W g of 320 m (80 m Â 4 fingers), respectively. The recessed ohmic structure, 19) the thermal CVD SiN passivation 20) and the field plate structure 21) were applied for RF performance improvement in these GaN-HEMTs.…”

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confidence: 99%

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Hoshi

Itoh

Toshiharu

et al. 2009

Appl. Phys. Express

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We have demonstrated the highest RF output power density of 12.88 W/mm, to our knowledge, at 2.14 GHz in GaN high electron mobility transistor on silicon (Si) substrate at high voltage operation. This highest record was achieved by reducing the parasitic loss at the conductive interface layer between the epitaxial structure and the Si substrate, and thinning the Si substrate thickness. The parasitic loss evaluation by a capacitance–voltage method proved to be effective since the epitaxial wafer selection is possible without fabricating RF devices. Si substrate as thin as 60 µm results in good thermal resistance and contributes to the large RF output power density.

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confidence: 99%

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Hoshi

Itoh

Toshiharu

et al. 2009

Appl. Phys. Express

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Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate

Okita

Toshiharu

Hoshi

et al. 2009

IEICE Trans. Electron.

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Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs

Cited by 2 publications

References 5 publications

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate

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