Effects of 3MeV protons irradiation on the electrical properties of silicon detectors

Radiation-Tolerant Proton Detector Based on the MAPbBr3 Single Crystal

“…(b) Normalized dark current of the detector at −10 V as a function of the proton fluence; the dashed line is the fitting curve. (c) Comparison of the performance degradation for the MAPbBr 3 detector and other reported semiconductor proton detectors (Si, TIPGe–Pn, diamond, and TlBr). The data points of diamond are proton-induced currents.…”

“…To compare the radiation tolerance with other proton detectors, we define the logarithmic current change (ξ) to assess the detector performance degradation ξ = prefix− | log ⁡ I I 0 | where I 0 and I are the dark currents before and after irradiation, respectively. Figure c (also Table S1) shows the comparison of the obtained ξ for the MAPbBr 3 detector and other reported semiconductor detectors, and data are plotted with respect to the absorbed dose, as calculated using eq . ,,, Notably, the performance of the silicon, thallium bromide (TlBr), and organic semiconductor (TIPGe–Pn) detectors significantly degraded at much lower proton doses. The diamond detector, which has been considered as the most radiation-tolerant detector, was reported to retain about 19% of the initial proton-induced current after being irradiated with 800 MeV protons at a dose of about 0.06 MGy .…”

“…(a) Dark I – V curves after various recovery times at room temperature. (b) Comparison of the recovery temperature and recovery time for the MAPbBr 3 detector with other semiconductor proton detectors (Si, TIPGe–Pn, and TlBr). (c) Vacancies induced by 3 MeV protons calculated by SRIM.…”

“…For instance, for a conventional silicon detector, its dark current could increase by an order of magnitude after 10 13 p cm −2 proton (3 MeV) irradiation. 9 Similarly, for a recently reported new-type detector based on the organic semiconductor, its dark current was found to increase by more than 20 times after only 4 × 10 11 p cm −2 proton (5 MeV) irradiation. 10 As a result, these short-life-time detectors cannot meet the increasingly stringent demands of the proton detection in high-energy physics experiments and proton therapy.…”

“…Proton detectors have varieties of essential applications in high-energy physics, deep space exploration, proton radiography, and proton therapy. − Among the conventional radiation detector types, the semiconductor detectors display enormous advantages for the proton detection, including excellent energy resolution, rapid time response, small detector size, and ease of integration. , However, the semiconductor detectors are more susceptible to the proton irradiation damage, which can induce the formation of vacancy and interstitial defects in the semiconductor, and consequently, the detector performance often degrades significantly over a period of time of operation. For instance, for a conventional silicon detector, its dark current could increase by an order of magnitude after 10 13 p cm –2 proton (3 MeV) irradiation . Similarly, for a recently reported new-type detector based on the organic semiconductor, its dark current was found to increase by more than 20 times after only 4 × 10 11 p cm –2 proton (5 MeV) irradiation .…”