2001
DOI: 10.1016/s0927-0248(00)00414-1
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Effectiveness of anisotropic etching of silicon in aqueous alkaline solutions

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Cited by 184 publications
(90 citation statements)
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“…As shown by Singh et al [10], the reflectivity of a (100) oriented Si wafer textured in a NaOH solution at~80°C for etching durations of 10-35 min is nearly constant in 500-1000 nm wavelength range and has a value 15-25%. The reflectivity values are higher than the above values for A< 500 and }, > 1000 nm.…”
Section: Methodsmentioning
confidence: 87%
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“…As shown by Singh et al [10], the reflectivity of a (100) oriented Si wafer textured in a NaOH solution at~80°C for etching durations of 10-35 min is nearly constant in 500-1000 nm wavelength range and has a value 15-25%. The reflectivity values are higher than the above values for A< 500 and }, > 1000 nm.…”
Section: Methodsmentioning
confidence: 87%
“…The reflectivity values are higher than the above values for A< 500 and }, > 1000 nm. Application of an ARC on the textured Si wafer reduces the reflectivity for all wavelengths below 1000 nm [10]. PS layers of suitable thicknesses have also been used as single layer ARC on Si solar cells having textured or polished front surface [11,12].…”
Section: Methodsmentioning
confidence: 99%
“…The reflectivity of the films is measured using a spectrophotometer fixed with an integrating sphere (Model: PVE 300, M/s Benthem, UK with an integrating sphere DTR6). To ensure the correctness of the measured reflectivity values, the measurements are done after baseline (i.e., back ground) correction using standard high purity BaSO 4 powder pressed in the form of a pallet. Fourier transform infrared spectroscopy (Model 2000, M/s Perkin Elmer spectrometer, USA) is used to get information about the surface bonding.…”
Section: Methodsmentioning
confidence: 99%
“…It is reported that a band at 564 cm À1 results from two unresolved structures at 562 and 565 cm À1 . The first one is assigned to Al-O bending for AlO 6 (5 + 1), while the second to a pure Al-O stretching mode for AlO 4 . 36 The peak observed in the 560-570 cm À1 region (a minor shift with d Al 2 O 3 ) represents Al-O modes.…”
Section: Film Thickness and The Refractive Indexmentioning
confidence: 99%
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