Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy

Lebedinskiǐ, Yu. Yu.; Zenkevich, A.

doi:10.1016/j.microrel.2007.01.064

Microelectronics Reliability

2007

DOI: 10.1016/j.microrel.2007.01.064

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Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy

Yu. Yu. Lebedinskiǐ

A. Zenkevich

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2009

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“…substrate through the 5 nm HfSiON layer. The Ni 2p peak is at 853.45 eV in the case of NiSi gate, indicating Ni-Si bonds15 are formed mainly near the NiSi/HfSiON interface.…”

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confidence: 99%

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

Tsuchiya¹,

Yoshimoto²,

Koga³

et al. 2009

Journal of Applied Physics

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Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices Appl. Phys. Lett. 97, 093301 (2010); 10.1063/1.3486180 Thermally stable high effective work function TaCN thin films for metal gate electrode applications J. Appl. Phys. 105, 053516 (2009); 10.1063/1.3078107Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide / SiO 2 interfaces Influences of Ni silicide phases on the effective work function ͑⌽ eff ͒ modulation effect with Al incorporation has been investigated in the Ni silicide/HfSiON systems. We formed metal-insulator-semiconductor capacitors with Al incorporated Ni silicide ͑NiSi, Ni 2 Si, and Ni 3 Si͒ gates on HfSiON by Al solid-phase diffusion ͑Al-SPD͒ process or Al ion implantation ͑I/I͒ process. In the Al-SPD process, Al is deposited on Ni silicide gate. In the Al-I/I process, Al ions were doped in the upper part of Ni silicide layer. In both cases, we performed Al drive-in annealing under the condition of 450°C for 30 min in N 2 ambient. It is found that the flat-band voltage ͑V fb ͒ values of Al incorporated NiSi and Ni 2 Si gates shift negatively and identical independent of Al incorporation processes. A highly concentrated Al piled-up layer, which induces ⌽ eff modulation to Al-⌽ eff value, seems to correspond to the V fb modulation. On the other hand, Al incorporation has little influence on ⌽ eff at the Ni 3 Si/ HfSiON interface. We revealed that a lower Al diffusion coefficient in Ni 3 Si phase reduces the Al interface density at the Ni 3 Si/ HfSiON interface. In addition, Al piled-up layer is inherently unstable at the Ni 3 Si/ HfSiON interface, which is confirmed from the detailed investigation about thermal stability of Al piled-up layer by using phase change process from NiSi to Ni 3 Si phase.

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“…substrate through the 5 nm HfSiON layer. The Ni 2p peak is at 853.45 eV in the case of NiSi gate, indicating Ni-Si bonds15 are formed mainly near the NiSi/HfSiON interface.…”

mentioning

confidence: 99%

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

Tsuchiya¹,

Yoshimoto²,

Koga³

et al. 2009

Journal of Applied Physics

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Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy

Cited by 1 publication

References 9 publications

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system

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