Effective work function modification of atomic-layer-deposited-TaN film by capping layer

Choi, K.; Alshareef, Husam N.; Wen, Huang-Chun; Harris, H. R.; Luan, H.F.; Senzaki, Yoshihide; Lysaght, Patrick; Majhi, P.; Lee, B. H.

doi:10.1063/1.2234288

Cited by 44 publications

(16 citation statements)

References 8 publications

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“…The wafer was subjected to thermal treatments post-dielectric deposition as well as post-metal depositions. The resulting EWF of 4.53eV for this stack is close to that reported in literature by other researchers [12]. A program similar to NCSU C-V modeler [11], was used to extract the EOT from the C-V curves.…”

Section: Workflows For High-k Metal Gate For Cmossupporting

confidence: 82%

High-Productivity Combinatorial PVD and ALD Workflows for Semiconductor Logic & Memory Applications

et al. 2009

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With materials innovation driving recent logic and memory scaling in the semiconductor industry, High-Productivity Combinatorial™ (HPC) technology can be a powerful tool for finding optimum materials solutions in a cost-effective and efficient manner. This paper will review unique HPC wet processing, physical vapor deposition (PVD), and atomic layer deposition (ALD) capabilities that were developed, enabling site-isolated testing of multiple process conditions on a single wafer. These capabilities were utilized to generate workflows for exploration of new chalcogenide alloys for phase change memory, and for high-K dielectric metal gate effective work-function measurements for CMOS.

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Section: Workflows For High-k Metal Gate For Cmossupporting

confidence: 82%

High-Productivity Combinatorial PVD and ALD Workflows for Semiconductor Logic & Memory Applications

et al. 2009

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“…Among the many metal gate candidates, TaN has shown very useful U m tunability through alloying with various elements. [68][69][70][71] In particular, Ta 1Àx Al x N y alloys are easily deposited, with very good electrical and chemical properties. 70 The Ta 1Àx Al x N y system is an ideal combinatorial materials science problem because systematic measurement of U m across the wide composition range, x, is not trivial, since capacitor fabrication and characterization based on a "one-composition-at-a-time" approach are extremely time consuming; thus very little data are available for this metal gate alloy system.…”

Section: Advanced Gate Stack Materialsmentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

224

189

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High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same "library" sample, they can be highly uniform with respect to fixed processing parameters. This article critically reviews the literature pertaining to applications of combinatorial materials science for electronic, magnetic, optical, and energy-related materials. It is expected that high throughput methodologies will facilitate commercialization of novel materials for these critically important applications. Despite the overwhelming evidence presented in this paper that high throughput studies can effectively inform commercial practice, in our perception, it remains an underutilized research and development tool. Part of this perception may be due to the inaccessibility of proprietary industrial research and development practices, but clearly the initial cost and availability of high throughput laboratory equipment plays a role. Combinatorial materials science has traditionally been focused on materials discovery, screening, and optimization to combat the extremely high cost and long development times for new materials and their introduction into commerce. Going forward, combinatorial materials science will also be driven by other needs such as materials substitution and experimental verification of materials properties predicted by modeling and simulation, which have recently received much attention with the advent of the Materials Genome Initiative. Thus, the challenge for combinatorial methodology will be the effective coupling of synthesis, characterization and theory, and the ability to rapidly manage large amounts of data in a variety of formats. V C 2013 AIP Publishing LLC. [http://dx

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“…[1][2][3][4][5] These ranges are due to structural variation created by Ta and N vacancies in the films and/or the formation of nonstoichiometric TaN, 3,6 which are rightly attributed to deposition conditions with different types of methods, such as atomic layer deposition, 2 chemical vapor deposition, 1 and sputtering deposition. TaN films present resistivity values and work functions ranging from 135 to 10 3 lX cm and from 4.13 to 5.05 eV, respectively.…”

Section: Introductionmentioning

confidence: 99%

Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrode

Lima

Diniz

Dói

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inInfluence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes Conduction mechanisms and reliability of thermal Ta 2 O 5 -Si structures and the effect of the gate electrode J. Appl. Phys. 97, 094104 (2005); 10.1063/1.1884758 Improved C -V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition Tantalum nitride (TaN) films were used as gate electrodes in MOS capacitors fabricated with 8-nm-thick SiO 2 as gate dielectric, and also used in Schottky diodes on n-type Si (100) substrates. TaN films with 20-and 100-nm-thick layers presented electrical resistivity of 439 and 472 lX cm, respectively. XPS measurements on these TaN film surfaces show oxygen incorporation, which can be related to air exposure. MOS capacitors with TaN/SiO structures, were fabricated on the same substrates. These devices were electrically characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements after sintering in a conventional furnace in a forming gas environment at 450 C, for different times between 0 and 30 min. From C-V measurements of the MOS capacitors, the extracted TaN work function, effective charge densities, and flatband voltage values were found to be between 4.23 and 4.42 eV, À10 11 and À10 12 cm À2 , and À0.12 and 0.25 V, respectively. From I-V measurements of the Schottky diodes, work function and ideality factor values between 4.40 and 4.53 eV, and 1.0 and 1.9, respectively, were extracted. The variation of the TaN work function (extracted from C-V and I-V curves), flatband voltage, and ideality factor values were related to dipole variations (at the TaN/SiO 2 interface), Ta and N vacancies in the TaN film, and oxygen incorporation on the TaN film surface. These results can contribute to work function engineering area for MOS technology.

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Effective work function modification of atomic-layer-deposited-TaN film by capping layer

Cited by 44 publications

References 8 publications

High-Productivity Combinatorial PVD and ALD Workflows for Semiconductor Logic & Memory Applications

High-Productivity Combinatorial PVD and ALD Workflows for Semiconductor Logic & Memory Applications

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrode

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