Effective suppression of AlN impurity in synthesis of CaAlSiN 3 :Eu 2+ phosphors under condition of atmospheric pressure

Li, Guanghao; Zhao, Yang; Xu, Jizheng; Mao, Zhiyong; Chen, Jingjing; Wang, Dajian

doi:10.1016/j.matchemphys.2017.08.032

Cited by 16 publications

(6 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The above result is also consistent with the ratios of N/O in different samples that measured by EDS (see Table 1). For the impurity phase AlN, its precise stoichiometric ratio in the reaction can hardly be determined due to its low solubility in CaAlSiN 3 , which results in the redundant AlN [32,33]. It can be found from Figure 3 that the main diffraction peaks of CaAlSiN 3 in the range of 30–40° shift to a low degree with the increase of Eu 2+ ion concentration in CASN:Eu 2+ @EuB 6 , which could be ascribed to be the substitution of larger B 2− (1.40 Å, CN = 4) for smaller N 3− (1.32 Å, CN = 4) [17].…”

Section: Resultsmentioning

confidence: 99%

The Enhanced Red Emission and Improved Thermal Stability of CaAlSiN3:Eu2+ Phosphors by Using Nano-EuB6 as Raw Material

Liu

Chang

et al. 2018

Nanomaterials

View full text Add to dashboard Cite

Synthesizing phosphors with high performance is still a necessary work for phosphor-converted white light-emitting diodes (W-LEDs). In this paper, three series of CaAlSiN3:Eu2+ (denoted as CASN:Eu2+) phosphors using Eu2O3, EuN and EuB6 as raw materials respectively are fabricated by under the alloy precursor normal pressure nitridation synthesis condition. We demonstrate that CASN:Eu2+ using nano-EuB6 as raw material shows higher emission intensity than others, which is ascribed to the increment of Eu2+ ionic content entering into the crystal lattice. An improved thermal stability can also be obtained by using nano-EuB6 due to the structurally stable status, which is assigned to the partial substitution of Eu–O (Eu–N) bonds by more covalent Eu–B ones that leads to a higher structural rigidity. In addition, the W-LEDs lamp was fabricated to explore its possible application in W-LEDs based on blue LEDs. Our results indicate that using EuB6 as raw materials can provide an effective way of enhancing the red emission and improving the thermal stability of the CASN:Eu2+ red phosphor.

show abstract

Section: Resultsmentioning

confidence: 99%

The Enhanced Red Emission and Improved Thermal Stability of CaAlSiN3:Eu2+ Phosphors by Using Nano-EuB6 as Raw Material

Liu

Chang

et al. 2018

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…The PLQY calculated is 94%. This is the highest PLQY compared to commercial BaMgAl 10 O 17 :Eu 2+ blue phosphor and CaAlSiN 3 :Eu 2+ red phosphor, which have PLQYs of 89 and 91%, respectively, , and to laboratory-fabricated nanomaterials such as YVO 4 :Bi 3+ ,Eu 3+ nanophosphors, Mn 2+ -doped Cd x Zn 1– x S/ZnS quantum dots, and CsPbCl 3 :Mn 2+ quantum dots, which have PLQYs ranging from 15 to 70%. − , The PL decay curve of (Ba,Sr) 2 SiO 4 :Eu 2+ phosphor under excitation at 405 nm, detected at 520 nm at room temperature, is presented in Figure j. The decay curves can be fitted to a single-exponential decay model by the following equation where I ( t ) and I 0 are the luminescence intensities at times t and 0, respectively.…”

mentioning

confidence: 93%

“…As a highly efficient luminescent activator with the allowed 4f–5d transitions, the Eu 2+ ion is the most used activator in phosphors, enabling broad-band luminescence and high efficiency. , A number of commercial luminescent materials for the lighting industry are based on the Eu 2+ active inorganic materials such as BaMgAl 10 O 17 :Eu 2+ blue phosphor, (Ba,Sr) 2 SiO 4 :Eu 2+ green phosphor, α-SiAlON:Eu 2+ yellow phosphor, and CaAlSiN 3 :Eu 2+ red phosphor. − In particular, (Ba,Sr) 2 SiO 4 :Eu 2+ micron phosphor is cheap, commercially available, and has been used in light-emitting diodes, fluorescent lamps, and displays because of its outstanding stability, high crystallinity, high quantum efficiency, and broad UV excitation area . For the first time, we employ micron Eu 2+ active phosphor as a down-shifting material for solar cell application.…”

mentioning

confidence: 99%

Large-Area 23%-Efficient Monolithic Perovskite/Homojunction-Silicon Tandem Solar Cell with Enhanced UV Stability Using Down-Shifting Material

et al. 2019

View full text Add to dashboard Cite

UV-induced degradation and parasitic ultraviolet (UV) absorption by the “sun-facing” carrier transport layer in a perovskite cell hinders stability and electrical performance when the perovskite cell is a top cell for a Si-based tandem. In this work, we tackle these issues by applying textured polydimethylsiloxane (PDMS) films that incorporate a down-shifting material (Ba,Sr)2SiO4:Eu2+ micron phosphor on the front of monolithic perovskite/silicon tandem cells. This film serves multiple purposes: antireflective control for the top cell, light trapping in the Si cell, as well as absorbing UV and re-emitting green light with high quantum yield. When applied onto a 4 cm2 monolithic perovskite/silicon tandem solar cell, the power conversion efficiency was improved from 20.1% (baseline device without any antireflective film) to 22.3% (device with an antireflective film but without the phosphors) and to 23.1% (device with down-shifting phosphor-incorprated antireflective film). The steady-state efficiency of 23.0% and a high fill factor (FF) of 81% achieved by the champion device are the highest values to date for a monolithic perovskite/silicon tandem that uses a homojunction silicon bottom cell. Moreover, results of a continuous UV irradiation test show that this composite down-shifting antireflection film significantly enhances the UV stability for the tandem device. This work demonstrates an elegant approach for improving the efficiency and stability for larger-area perovskite/silicon tandems.

show abstract

“…This problem could be overcome by the addition of red phosphors. Among these, nitride phosphors have been widely investigated due to their excellent luminescence properties and thermal stability, resulting from their rigid cross‐linked 3D covalent frameworks comprising the highly strained (Al/Si)N 4 tetrahedron 7‐12 . Currently, several red‐emitting nitride phosphors such as M 2 Si 5 N 8 :Eu 2+ (M=Ca, Ba, Sr), SrLiAl 3 N 4 :Eu 2+ , and CASN:Eu 2+ have been extensively studied due to their enhanced color rendition properties 7,13–17 .…”

Section: Introductionmentioning

confidence: 99%

“…Here, the activated ion Ce 3+ ‐Eu 2+ increased the luminous intensity of the phosphor via energy transfer from Eu 2+ to Ce 3+ . Li et al 10,19 increased the luminous intensity of CASN:Eu 2+ by decreasing the content of AlN powder in the raw material and hence its impurities. However, the product structure remained unchanged and its thermal stability was not improved.…”

Section: Introductionmentioning

confidence: 99%

Enhanced red emission and improved thermal quenching of CaAlSiN₃:Eu²⁺ phosphors via boron doping

Yuan

Huang

et al. 2021

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

The development of high‐performance phosphors is required for phosphor‐converted white light‐emitting diodes. However, most approaches are unable to achieve optimum emission intensity and thermal quenching simultaneously. Here, a series of CaAlSiN3:Eu2+ (CASN:Eu2+) red‐emitting phosphors doped with B were synthesized using field‐assisted sintering technology. Compared with CASN:Eu2+, the B‐doped phosphor exhibited high external quantum efficiency (EQE) and good thermal quenching performance. With boron doping, the EQE of CaAlSiN3:Eu2+ shows an obvious growth, increasing from 48.83% to 70.68%. Meanwhile, thermal quenching performance has also been greatly improved, which is strongly associated with the band structure of Eu2+ and the crystal structure of CASN. The location of B in the crystal lattice was studied and the mechanism of improving thermal quenching via B doping was discussed in detail. Finally, a white LED fabricated by the combination of a GaN blue chip (450 nm) with the as‐synthesized red phosphors and Y3(Al, Ga)5O12:Ce3+ green phosphors (531 nm), shows a high color rendering index (Ra =91.6). This study offers a novel method to improve luminescence properties of CASN:Eu2+ red‐emitting phosphors, which may broaden their application in solid‐state lighting devices.

show abstract

Effective suppression of AlN impurity in synthesis of CaAlSiN 3 :Eu 2+ phosphors under condition of atmospheric pressure

Cited by 16 publications

References 20 publications

The Enhanced Red Emission and Improved Thermal Stability of CaAlSiN3:Eu2+ Phosphors by Using Nano-EuB6 as Raw Material

The Enhanced Red Emission and Improved Thermal Stability of CaAlSiN3:Eu2+ Phosphors by Using Nano-EuB6 as Raw Material

Large-Area 23%-Efficient Monolithic Perovskite/Homojunction-Silicon Tandem Solar Cell with Enhanced UV Stability Using Down-Shifting Material

Enhanced red emission and improved thermal quenching of CaAlSiN₃:Eu²⁺ phosphors via boron doping

Contact Info

Product

Resources

About

Effective suppression of AlN impurity in synthesis of CaAlSiN 3 :Eu 2+ phosphors under condition of atmospheric pressure

Cited by 16 publications

References 20 publications

The Enhanced Red Emission and Improved Thermal Stability of CaAlSiN3:Eu2+ Phosphors by Using Nano-EuB6 as Raw Material

The Enhanced Red Emission and Improved Thermal Stability of CaAlSiN3:Eu2+ Phosphors by Using Nano-EuB6 as Raw Material

Large-Area 23%-Efficient Monolithic Perovskite/Homojunction-Silicon Tandem Solar Cell with Enhanced UV Stability Using Down-Shifting Material

Enhanced red emission and improved thermal quenching of CaAlSiN3:Eu2+ phosphors via boron doping

Contact Info

Product

Resources

About

Enhanced red emission and improved thermal quenching of CaAlSiN₃:Eu²⁺ phosphors via boron doping