Effective Segregation Coefficient of Boron in Silicon Ingots Grown by the Czochralski and Bridgman Techniques

Abstract

Hall measurements and four‐point probe resistivity measurements were used to determine the concentration profile of boron in doped semiconductor silicon ingots grown by Czochralski and Bridgman techniques. The concentration profiles were fitted to the normal segregation equation and the effective segregation coefficient, knormaleff , was calculated. The average value of knormaleff for boron was 0.786±0.036 in Czochralski single crystals and 0.803±0.036 in Bridgman polycrystals.

Boron segregation control in silicon crystal ingots grown in Czochralski process

“…The square of the correlation coefficient, R 2 , is 0.997 close to unity, which demonstrates a good linear fit to the data. k e ¼ 0:738 AE 0:006 for boron in the silicon melt is in reasonable agreement with other works [9,10], where k e ¼ 0:7 and k e ¼ 0:78 AE 0:03 are reported irrespective of the crystal growth rates. Fig.…”

“…For diffusion system without buoyant convection in zero gravity, Witt et al [8] reported the dramatic increase of the dopant concentration in the axial direction and non-uniform radial distribution in the crystals, compared with results on earth. Ravishankar et al [9] and Huff et al [10] investigated k e of Boron in small amount of melt. They found that k e in ''CZ'' system was different from k e in floating zone system [9], and k e did not change with crystal growth rate [9,10].…”

“…Ravishankar et al [9] and Huff et al [10] investigated k e of Boron in small amount of melt. They found that k e in ''CZ'' system was different from k e in floating zone system [9], and k e did not change with crystal growth rate [9,10]. The brief review of segregation was performed by Hurle and Rudolph [11] and Wang et al [12].…”

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

“…The square of the correlation coefficient (R 2 ) is 0.999 close to unity, which shows a good linear fit to the data. In the nearly complete stirring convection without magnetic field, k e ¼ 0.72870.006 for boron is in good agreement with other works [4,16], where k e =0.7 and 0.73870.006 are reported.…”

“…The pulling speeds are varied in the range 0.6570.05 mm/min. k e did not change with crystal growth [16,17].…”