Effective refractive index and composition of oxidized porous silicon films

“…The refractive index of the substrate is n s = 1.52, that of the air is n 0 = 1.00. The effective refractive index of the thin layer was determined by the extended Bruggeman effective medium theory [40] as follows:…”

Section: Interference Propertiesmentioning

confidence: 99%

Optical properties of zinc peroxide and zinc oxide multilayer nanohybrid films

Sebők

Szabó

Dékány

2009

Applied Surface Science

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“…This entails an important rise of refractive index compared to silicon substrate (3.78), which can lead to an increase in the reflectivity greater than 70 %. However, the stability of the porous layer requires a porosity value not exceeding 65 % that corresponds to a refractive index of 1.93 [28][29][30]. In that case, the calculation resulted in a designed thickness of approximately 92 nm for a refractive index equal to 1.90, corresponding to a porosity of 60 %.…”

Section: Porous Silicon Layermentioning

confidence: 99%

Optical properties of porous Si/PECVD SiN_X:H reflector on single crystalline Si for solar cells

Remache¹,

Nychyporuk

Guermit³

et al. 2016

Materials Science-Poland

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The improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a single crystalline silicon substrate. The measurement of the total reflectivity (R T ) on Si/PS surface showed a significant improvement in optical confinement compared to that measured on Si/standard Al back surface field (BSF). The internal reflectivity (R B ) extracted from total reflectivity measurements achieved 86 % for the optimized single PS layer (92 nm thick layer with 60 % porosity) in the wavelength range between 950 and 1200 nm. This improvement was estimated as more than 17 % compared to that measured on the surface of Si/BSF Al contact. To improve the stability and passivation properties of PS layer BR, silicon nitride layer (SiN x ) was deposited by PECVD on a PS layer. The maximum measured total reflectivity for PS/SiN x achieved approximately 56 % corresponding to an improved R B of up to 83 %. The PS formation process in combination with the PECVD SiN x , can be applied in the photovoltaic cell technology and offer a promising technique to produce high-efficiency and low-cost c-Si solar cells.

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“…The F-P structure located at the tip of multi-mode fiber, consists of three layers of porous dielectric film with Physical Vapor Deposition (PVD) method [21][22][23]. To evaluate its capability for refractive index measurement, the fiber FPI device was tested using glycerol/water solutions with different concentrations, and ethanol at room temperature.…”

Section: Introductionmentioning

confidence: 99%