2003
DOI: 10.1142/s0129156403002022
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Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach

Abstract: We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.

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Cited by 22 publications
(16 citation statements)
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“…This involves successive solution of a heat equation for which the Green's function is well known, giving (see Ref. [61] for the details)…”
Section: Thermodynamic Effective Potentialmentioning
confidence: 99%
“…This involves successive solution of a heat equation for which the Green's function is well known, giving (see Ref. [61] for the details)…”
Section: Thermodynamic Effective Potentialmentioning
confidence: 99%
“…Quite a lot of attention has been paid to the quantum mechanical modeling of free (collisionless) transport. Efforts here include the direct solution of the Schrödinger equation [2], [11], macroscopic moment equations (quantum hydrodynamic models) [9], [10], and extensions of semiclassical Monte Carlo methods, either directly [13], [8] or via effective potential approaches [6], [1], [12]. Comparably little work has been done on the inclusion of quantum effects into collision operators.…”
Section: Introductionmentioning
confidence: 99%
“…Apart from more pragmatic purposes, effective quantum potentials have also attracted attention as an attempt to return to phase space and classical statistical mechanics. For a general introduction on the subject of effective potentials, the reader can see the works [4,5] as well as the references therein.…”
Section: Introductionmentioning
confidence: 99%
“…Recently [5,6], a new effective quantum potential has been proposed and applied [7] to model nano-MOSFETs of 25nm. The advantage of the new method over the previous ones like is that it does not require the introduction of a fitting parameter to be adjusted at the beginning of the simulations.…”
Section: Introductionmentioning
confidence: 99%
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