Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers

Bobrenko, Yu. N.; Pavelets, S. Yu.; Pavelets, A. M.

doi:10.1134/s1063782609060219

Cited by 6 publications

(6 citation statements)

References 1 publication

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“…As shown in [31], the length of SCR in highresistance ZnS crystals is about 100 nm. Foreign inclusions, defects, activators, etc.…”

Section: Resultsmentioning

confidence: 95%

Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis

Yu¹,

Lashkaryov²

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Fine-dispersed ZnS doped with Cu was prepared using self-propagating hightemperature synthesis. In the photoluminescence excitation spectra, the blue shift of the host lattice excitation peak is observed for powder ZnS:Cu that contains nano-and mesosized (submicron) particles. The obtained spectra indicate that radiative recombination in meso-sized particles is significantly reduced as compared to micro-sized particles, which can be caused by the increase of non-radiative relaxation processes in surface states.

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“…As shown in [31], the length of SCR in highresistance ZnS crystals is about 100 nm. Foreign inclusions, defects, activators, etc.…”

Section: Resultsmentioning

confidence: 95%

Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis

Yu¹,

Lashkaryov²

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Our researches showed that the application of Zn Cd 1− S solid solutions with the parameter > 0.5 (an elevated content of the Zn component in the SS) gives rise to technological difficulties, which do not exist for the same solid solutions, but with < 0.5. Those difficulties also take place for ZnS and ZnSe [22,31]. They consist in producing a low-ohmic SS film and creating an ohmic contact to it.…”

Section: Creation Of a Multilayer Heterostructurementioning

confidence: 99%

“…There are sensors fabricated on the basis of the A 2 B 6 compound with the maximum band gap, namely, ZnS ( = 3.58 eV). But they are not sensitive in the whole ultraviolet interval [20,22,23], which restricts their application scope.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

Pavelets¹,

Bobrenko²,

Semikina³

et al. 2019

Ukr. J. Phys.

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Effective semiconductor ultraviolet sensors on the basis of Zn0.6Cd0.4S and Zn0.7Cd0.3 solid solutions (SSs) are fabricated. The sensors include variband layers and a thin (∼10 nm) stable polycrystalline p-Cu1.8S film as a transparent component of the surface-barrier structure. The n-CdS layers are used as substrates for the epitaxial growing of SSs. The problems of obtaining low-resistive ZnxCd1−xS polycrystalline layers, providing an ohmic contact with them, and matching the lattice parameters in the SS and the substrate material are resolved by applying intermediate variband layers. On the basis of a heterostructure with glass filters, a selective sensor in the UV-A spectral interval is developed, as well as sensors sensitive to the pigmentation interval of solar radiation (the violet-blue section). Energy band diagrams of the multilayer structure are plotted. The results of Auger-spectroscopic researches and the researches of the main electrical and photovoltaic properties of sensors are reported.

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“…It should be noted that it is possible to get an ideal lattice matching for the considered pair by using interlayers of solid solutions with variable composition [1,2]. In this work, we used interlayers of (ZnTe) x (CdSe) 1-x solid solutions.…”

Section: Fabrication Of Photoelectric Convertersmentioning

confidence: 99%

“…Among them are those based on the surface-barrier structures whose transparent component is degenerate copper sulfide pCu 1.8 S, while photosensitive components are n-type semiconductors ZnS [1], ZnSe [2] or CdS [3]. The most efficient are p-Cu 1.8 S/n-CdS UV sensors.…”

Section: Introductionmentioning

confidence: 99%

ZnTe-based UV sensors

Pavelets¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract.A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surfacebarrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu 1.8 S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.

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Effective photoelectric converters of ultraviolet radiation with graded-gap ZnS-based layers

Cited by 6 publications

References 1 publication

Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis

Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

ZnTe-based UV sensors

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