Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide

Abstract

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POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

“…These include the classical silicon-based compounds (SiO 2 , 1 SiN x , 2,3 and a-Si:H 4 ) as well as the more recently proven Al 2 O 3 , 5 AlN, 6 Ga 2 O 3 , 7 TiO 2 , 8 Ta 2 O 5 , 9 HfO 2 , 10 ZnO, 11 and Nb 2 O 5 . 12 Sometimes these materials are combined in stacks.…”

Process–Structure–Properties Relationships of Passivating, Electron‐Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus‐Doped Polysilicon

“…[1,2] The key to this contact technology is reducing recombination losses without increasing resistive losses. The passivating, carrier-selective functionality can be achieved using different materials systems, such as the stack of ultrathin dielectric layers including silicon oxide (SiO x ), [3] aluminum oxide (Al 2 O 3 ), [4][5][6] various transition metal oxides, [3,[5][6][7][8] and a stack of hydrogenated doped and undoped amorphous silicon (a-Si:H) layers. [9,10] Another effective approach is to use a very thin SiO x layer with a heavily doped polycrystalline silicon (poly-Si) layer, also known as a tunnel oxide passivated poly-Si contact (TOPCon) [11][12][13][14][15][16] or poly-Si on oxide (POLO).…”

Low-Temperature Atomic Layer Deposited Magnesium Oxide as a Passivating Electron Contact for c-Si-Based Solar Cells

“…Although the dopantfree approaches do not yet reach the >25 % efficiency level of the doped silicon layers [5], solar cell with metal oxide layers have in a span of a few years already demonstrated efficiencies in excess of 22 % [6]. Also more and more carrier-selective materials based on metal oxides (TiO2 [6], Nb2O5 [7], MO3 [8]), metal nitrides (TaN [9]) and metal fluorides (LiF [10]) are being developed for device applications. Further optimization and also further exploration of novel carrier-selective contacts therefore remains of importance to chart the potential of this dopant-free approach.…”