Effective passivation for nanocrystalline Si layer/crystalline Si solar cells by use of phosphosilicate glass

Imamura, Kentaro; Onitsuka, Yuya; Kunieda, Shogo; Kobayashi, Hikaru

doi:10.1016/j.solener.2018.04.063

Cited by 5 publications

(3 citation statements)

References 16 publications

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“…Specimen (a) also had a high IQE value of ∼0.6 at ∼400 nm, which was attributed to graded band structure of nc-Si layer to prevent surface recombination. 12 However, due to a poor B-BSF passivation effect for the rear surface, the open-circuit voltage (V oc ) wasn't high (i.e., 605 mV). To improve the B-BSF passivation effect by an increase in the thickness of a p + layer, the diffusion process was performed at 1025 °C (curve b).…”

Section: Resultsmentioning

confidence: 99%

“…Sample evaluation and solar cell fabrication were performed using the same methods reported in our previous literature. [9][10][11][12]…”

Section: Methodsmentioning

confidence: 99%

“…1). [9][10][11][12] In the SSCT method, an Si surface dissolves nonuniformly, leading to formation of a nanocrystalline Si (nc-Si) layer. The porosity of the nc-Si layer gradually decreases with the depth, and the refractive index gradually increases with it, leading to ultralow-reflectance less than ∼3% in the wide wavelength region between 400 and 900 nm.…”

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confidence: 99%

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Communication—Enhancement of Boron Back-Surface-Field and Suppression of Auger Recombination to Improve Ultralow-Reflectance Si Solar Cells

Kunieda¹,

Imamura²,

Kobayashi³

2020

ECS J. Solid State Sci. Technol.

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A high conversion efficiency of 20.2% is achieved for simple structured-Si solar cells without a conventional anti-reflection layer. The ultralow-reflectance less than ∼3% is achieved by formation of a nanocrystalline Si (nc-Si) layer using the surface structure chemical transfer (SSCT) method which takes only 15 s. The nc-Si layer is passivated by phosphosilicate glass, while the rear Si surface is passivated by boron back-surface-field (B-BSF). By optimizing diffusion conditions, a high short-circuit current density of 41.8 mAcm −2 and improvement of an open-circuit voltage are achieved owing to enhancement of B-BSF and suppression of Auger recombination in the phosphorus-doped nc-Si layer.

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Section: Resultsmentioning

confidence: 99%

“…Sample evaluation and solar cell fabrication were performed using the same methods reported in our previous literature. [9][10][11][12]…”

Section: Methodsmentioning

confidence: 99%