Effective numbers of charge carriers in doped graphene: Generalized Fermi liquid approach

Kupčić, Ivan; Nikšić, Goran; Rukelj, Zoran; Pelc, Damjan

doi:10.1103/physrevb.94.075434

Cited by 9 publications

(13 citation statements)

References 36 publications

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“…In Eq. (4.1), we introduced =hω and the α-dependent interband current vertices J vc αk [33] which are calculated in the Appendix for the WSM and GSM cases. Here we limit our discussion to the interband conductivity, knowing that a Drude term will always be present for a finite carrier density.…”

Section: Optical Conductivitymentioning

confidence: 99%

Distinguishing the gapped and Weyl semimetal scenario in ZrTe5 : Insights from an effective two-band model

et al. 2020

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Here we study the static and dynamic transport properties of a low-energy two-band model proposed previously in Martino et al. [PRL 122, 217402 (2019)], with an anisotropic in-plane linear momentum dependence and a parabolic out-of-plane dispersion. The model is extended to include a negative band gap, which leads to the emergence of a Weyl semimetal (WSM) state, as opposed to the gapped semimetal (GSM) state when the band gap is positive. We calculate and compare the zero-and finite-frequency transport properties of the GSM and WSM cases. The DC properties that are calculated for the GSM and WSM cases are Drude spectral weight, mobility, and resistivity. We determine their dependence on the Fermi energy and crystal direction. The in-and out-of-plane optical conductivities are calculated in the limit of the vanishing interband relaxation rate for both semimetals. The main common features are an ω 1/2 in-plane and ω 3/2 out-of-plane frequency dependence of the optical conductivity. We seek particular features related to the charge transport that could unambiguously point to one ground state over the other, based on the comparison with the experiment. Differences between the WSM and GSM are in principle possible only at extremely low carrier concentrations and at low temperatures.

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Section: Optical Conductivitymentioning

confidence: 99%

Distinguishing the gapped and Weyl semimetal scenario in ZrTe5 : Insights from an effective two-band model

et al. 2020

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“…, the quantity which is usually called the auxiliary electron-hole propagator [6,20,28], the three-point electron-hole propagator, or the threepoint susceptibility [32]. As long as these building blocks of π µν (q, iν n ) are exact, all Kubo-Ward relations from the previous section are exactly fulfilled.…”

Section: Theoretical Approaches a Bethe-salpeter Equationsmentioning

confidence: 93%

Intraband memory function and memory-function conductivity formula in doped graphene

Kupčić

2017

Phys. Rev. B

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The generalized self-consistent field method is used to describe intraband relaxation processes in a general multiband electronic system with presumably weak residual electron-electron interactions. The resulting memory-function conductivity formula is shown to have the same structure as the result of a more accurate approach based on the quantum kinetic equation. The results are applied to heavily doped and lightly doped graphene. It is shown that the scattering of conduction electron by phonons leads to the redistribution of the intraband conductivity spectral weight over a wide frequency range, however, in a way consistent with the partial transverse conductivity sum rule. The present form of the intraband memory function is found to describe correctly the scattering by quantum fluctuations of the lattice, at variance with the semiclassical Boltzmann transport equations, where this scattering channel is absent. This is shown to be of fundamental importance in quantitative understanding of the reflectivity data measured in lightly doped graphene as well as in different low-dimensional strongly correlated electronic systems, such as the cuprate superconductors.

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“…(4.1) In Eq. (4.1) we have introduced Ω = ω and the αdependent interband current vertices J vc αk [33] which are calculated in Appendix A for the WSM and GSM cases.…”

Section: Optical Conductivitymentioning

confidence: 99%

Distinguishing the gapped and Weyl semimetal scenario in ZrTe$_5$: insights from an effective two-band model

Rukelj,

Homes,

Orlita

et al. 2020

Preprint

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Here we study the static and dynamic transport properties of a low energy two-band model proposed previously in E. Martino et al. [PRL 122, 217402 (2019)], with an anisotropic in-plane linear momentum dependence, and a parabolic out-of-plane dispersion. The model is extended to include a negative band gap, which leads to the emergence of a Weyl semimetal (WSM) state, as opposed to the gapped semimetal (GSM) state when the band gap is positive. We calculate and compare the zero and finite frequency transport properties of the GSM and WSM cases. The dc properties that are calculated for the GSM and WSM cases are Drude spectral weight, mobility and resistivity. We determine their dependence on the Fermi energy and crystal direction. The in-and out-of-plane optical conductivities are calculated in the limit of the vanishing interband relaxation rate for both semimetals. The main common features are an ω 1/2 in-plane and ω 3/2 out-of-plane frequency dependence of the optical conductivity. We seek particular features related to the charge transport that could unambiguously point to one ground state over the other, based on the comparison with the experiment. Differences between the WSM and GSM are in principle possible only at extremely low carrier concentrations, and at low temperatures.

show abstract

Effective numbers of charge carriers in doped graphene: Generalized Fermi liquid approach

Cited by 9 publications

References 36 publications

Distinguishing the gapped and Weyl semimetal scenario in ZrTe5 : Insights from an effective two-band model

Distinguishing the gapped and Weyl semimetal scenario in ZrTe5 : Insights from an effective two-band model

Intraband memory function and memory-function conductivity formula in doped graphene

Distinguishing the gapped and Weyl semimetal scenario in ZrTe$_5$: insights from an effective two-band model

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