Effective mass of image-potential states

Giesen, K.; Hage, F.; Himpsel, F. J.; Riess, H. J.; Steinmann, W.; Smith, N. V.

doi:10.1103/physrevb.35.975

Cited by 138 publications

(59 citation statements)

References 23 publications

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“…We synthesized two compounds (scheme 1: 2 and 5) having redox-active terminal groups with lowest unoccupied molecular orbitals (LUMOs) having energies close to, but greater than, the Fermi levels of the electrodes (EGaIn ≈ -4.3 eV, Ag ≈ -4.5 eV). 43,44,45 The synthesis of these compounds is described in the Supporting Information. We do not know the exact energies of the LUMOs of these compounds, but we do know that the LUMO of 2 is higher in energy than the LUMO of 5, because the addition of a second aromatic ring increases the electron affinity of the moiety.…”

Section: Resultsmentioning

confidence: 99%

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga₂O₃/Gallium–Indium Eutectic Junctions

et al. 2012

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Abstract:The liquid-metal eutectic of gallium and indium (EGaIn) is a useful electrode for making soft electrical contacts to self-assembled monolayers (SAMs). This electrode has, however, one feature whose effect on charge transport has been incompletely understood: a thin (approximately 0.7 nm) film-consisting primarily of Ga 2 O 3 -that covers its surface when in contact with air. SAMs that rectify current have been measured using this electrode in Ag TS -SAM//Ga 2 O 3 /EGaIn junctions. This paper organizes evidence, both published and unpublished, showing that the molecular structure of the SAM (specifically, the presence of an accessible molecular orbital asymmetrically located within the SAM), not the difference between the electrodes or the characteristics of the Ga 2 O 3 film, causes the observed rectification. By examining and ruling out potential mechanisms of rectification that rely either on the Ga 2 O 3 film, or on the asymmetry of the electrodes, this paper demonstrates that the structure of the SAM dominates charge transport through Ag TS -SAM//Ga 2 O 3 /EGaIn junctions, and that the electrical characteristics of the Ga 2 O 3 film have a negligible effect on these measurements.3

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Section: Resultsmentioning

confidence: 99%

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga₂O₃/Gallium–Indium Eutectic Junctions

et al. 2012

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“…Energy relative to vacuum level, eV The difference in upper band edge energies also affects the effective mass calculated by the means of Giesen, et al 50 In their calculation, the work function was taken as 4.56 eV, and the various parameters necessary in the calculation are listed below: 143 In Figure They may also be expected to scatter outgoing photoelectrons, altering both the direction and kinetic energy of the photoelectrons.…”

Section: Fiqure 27mentioning

confidence: 99%

“…65 ,40 When image potential states were observed, the threshold for unacceptably strong space charge broadening was reported to occur at about 5xl0 4 The angular resolution in this experiment was ±2. 50 ---------1.,. showing the electrostatic potentials is given in Figure 18.…”

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confidence: 99%

Image potential states at metal-dielectric interfaces

Merry¹

1992

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“…The electron motion parallel to the surface is quasifree with effective mass close to one. 48,51 The higher is n, the further from the surface is located the excited electron, and the smaller is its coupling with metal bulk electrons so that the lifetime of the image states increases as n 3 . 12,29,[50][51][52][53][54] The hybridization between QWSs and ISs would alter the weight of the QWS wave function inside the metal film, shifting part of the electron density into the vacuum.…”

Section: Introductionmentioning

confidence: 99%

“…The ISs correspond to an excited electron bound in front of the metal surface by the image charge potential. When electron penetration into the metal is prohibited by the projected band gap, ISs form a Rydberg series converging toward the vacuum level E V with energies at¯ given by 12,13,[48][49][50][51] …”

Section: Introductionmentioning

confidence: 99%

Quantum-well states with image state character for Pb overlayers on Cu(111)

et al. 2012

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We study theoretically the quantum well states (QWSs) localized in Pb overlayers on Cu(111) surface. Particular emphasis is given to the states with energies close to the vacuum level. Inclusion of the long-range image potential tail into the model potential description of the system allows us to show the effect of hybridization between QWSs and image potential states (ISs). The particle-in-a-box energy sequence characteristic for QWSs evolves into the Rydberg series converging towards the vacuum level. The electron density of the corresponding states is partially moved from inside the metal overlayer into the vacuum. The decay rates due to the inelastic electron-electron scattering decrease with increasing energy, opposite to "conventional" QWSs and similar to the ISs. Many-body and wave packet propagation calculations of the inelastic decay rates are supplemented by simple analysis based on the phase accumulation model and wave-function penetration approximation. This allows an analytical description of the dependence of the QWS/ISs hybridization on different parameters and, in particular, on the overlayer thickness.

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Effective mass of image-potential states

Cited by 138 publications

References 23 publications

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga₂O₃/Gallium–Indium Eutectic Junctions

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga₂O₃/Gallium–Indium Eutectic Junctions

Image potential states at metal-dielectric interfaces

Quantum-well states with image state character for Pb overlayers on Cu(111)

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Effective mass of image-potential states

Cited by 138 publications

References 23 publications

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga2O3/Gallium–Indium Eutectic Junctions

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga2O3/Gallium–Indium Eutectic Junctions

Image potential states at metal-dielectric interfaces

Quantum-well states with image state character for Pb overlayers on Cu(111)

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Product

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The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga₂O₃/Gallium–Indium Eutectic Junctions

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga₂O₃/Gallium–Indium Eutectic Junctions