Effective enhancement of thermoelectric and mechanical properties of germanium telluride <i>via</i> rhenium-doping

Suwardi, Ady; Lim, Su Hui; Zheng, Yun; Wang, Xizu; Chien, Sheau Wei; Tan, Xian Yi; Zhu, Qiang; Wong, Lai Mun; Cao, Jin; Wang, Weide; Yan, Qingyu; Tan, Chee Kiang Ivan; Xu, Jianwei

doi:10.1039/d0tc04903d

Cited by 44 publications

(26 citation statements)

References 84 publications

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“…HH compounds with 18 valence electrons per unit cell are semiconductors possessing the narrow gap and sharp slope of the density of states (DOS) around the Fermi level. A rapid change in the DOS is a good indicator of large thermopower (Chauhan et al, 2018;Suwardi et al, 2020;Cao et al, 2021).…”

Section: Electronic Band Structures and Ztmentioning

confidence: 99%

“…There is an appreciating interest to clean energy solutions on combating climate change. The demand of alternate energy technologies draws attention to thermoelectric (TE) materials that convert waste heat to electricity (Hamid Elsheikh et al, 2014;Ul Haq et al, 2018;Suwardi et al, 2020). TE devices consist of n-and p-type TE materials that are electrically connected in a series circuit while the heat gradients applied are parallel to the device.…”

Section: Introductionmentioning

confidence: 99%

“…This characteristic opens vast possibilities for optimizing TE efficiency in designing materials and bandgaps. However, materials (such as Te and Pb) used to make high performance chalcogenides and skutterudites thermoelectrics can be costly and environmentally toxic (Zevalkink et al, 2011;Mulla and Rabinal 2018;Recatala-Gomez et al, 2020;Suwardi et al, 2020;Zheng et al, 2021). Furthermore, thermoelectric materials can be thermally unstable above room temperature and tends to form secondary phases due to interface instability.…”

Section: Introductionmentioning

confidence: 99%

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A Systematic Approach for Semiconductor Half-Heusler

et al. 2021

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The key to designing a half-Heusler begins from the understanding of atomic interactions within the compound. However, this pool of knowledge in half-Heusler compounds is briefly segregated in many papers for specific explanations. The nature of the chemical bonding has been systematically explored for the large transition-metal branch of the half-Heusler family using density-of-states, charge-density, charge transfer, electron-localization-function, and crystal-orbital-Hamilton-population plots. This review aims to simplify the study of a conventional 18-electron configuration half-Heusler by applying rules proposed by renowned scientists to explain concepts such as Zintl-Klemm, hybridization, and valence electron content (VEC). Atomic and molecular orbital diagrams illustrate the electron orbital transitions and provide clarity to the semiconducting behavior (VEC = 18) of half-Heusler. Eighteen-electron half-Heusler usually exhibits good thermoelectric properties owing to favorable electronic structures such as narrow bandgap (<1.1 eV), thermal stability, and robust mechanical properties. The insights derived from this review can be used to design high-performance half-Heusler thermoelectrics.

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Section: Electronic Band Structures and Ztmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Systematic Approach for Semiconductor Half-Heusler

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“…Nanostructured or nanocomposite thermoelectric materials can help enhance ZT via increasing power factor through modulation doping, decreasing thermal conductivity via phonon scattering [72], increasing S by modulating the density of states of carriers, and energy filtering which results in simultaneous increase in S and σ [73]. In addition, nanomaterials may help to enhance mechanical properties via precipitation hardening which pins dislocations from moving [74]. However, the difficulties in designing nanostructured thermoelectrics lie in strong inter-correlation between materials transport properties, which demand careful adjustment of carrier densities.…”

Section: Bottom-up Nanostructuring Of Thermoelectricsmentioning

confidence: 99%

Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials

Zhu

Wang

et al. 2021

Nano-Micro Lett.

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The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the “phonon glass electron crystal” paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.

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“…For instance, while it is generally desirable to have a high power factor (S 2 σ) and low thermal conductivity (κ L +κ e ), improving the electrical conductivity (σ) leads to higher electronic thermal conductivity (κ e ). In addition to optimizing thermoelectric properties, the mechanical properties such as hardness, stiffness, and thermal expansion coefficient cannot be overlooked to ensure practical applications [7–13] . With respect to its application temperature, thermoelectrics can be classified into low (300–500 K), medium (500–800 K), and high temperature (>800 K) materials.…”

Section: Introductionmentioning

confidence: 99%

Realizing zT Values of 2.0 in Cubic GeTe

et al. 2021

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Over the past two years, GeTe has quickly cemented its place as the best performing thermoelectric material at a medium temperature range. The key factors behind the extraordinary performance lie in its favourable electronic and thermal properties, which arise from its unique crystal structure. The slight rhombohedral distortion at temperatures below 700 K results in lower lattice thermal conductivity while maintaining high electronic properties via high level of band‐convergence. In addition, while GeTe has a cubic structure above 700 K, the local atomic disorder persists, which maintains its low thermal conductivity. To date, the understanding of the temperature‐dependent thermoelectric properties of cubic GeTe at room temperature and above is very limited. This is due to the difficulties in stabilizing cubic GeTe at low temperatures. In this work, we leverage on low level of Ti doping to stabilize cubic‐phase GeTe at room temperature and elucidate its temperature‐dependent electronic and thermal properties. Further doping with In, Cu, Sb, and Pb results in zT as high as 2 at 773 K, and high average zT of 1.4 between 300 and 800 K.

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Effective enhancement of thermoelectric and mechanical properties of germanium telluride via rhenium-doping

Abstract: GeTe as one of the most promising medium temperature thermoelectrics has progressed leaps and bounds in the recent years, largely thanks to a combination of its unique electronic, thermal and...

Cited by 44 publications

References 84 publications

A Systematic Approach for Semiconductor Half-Heusler

A Systematic Approach for Semiconductor Half-Heusler

Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials

Realizing zT Values of 2.0 in Cubic GeTe

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