Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Lee, Seungho; Kang, Byung Hee; Kim, Minsu; Ahn, Jinho; Cho, Han-Ku; Lee, Han-Shin; Park, Jin-Goo

doi:10.7567/jjap.51.096503

Cited by 30 publications

(3 citation statements)

References 11 publications

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“…Therefore, reactive-ion etching and inductively coupled plasma (ICP) methods have been widely used for mesa isolation etching for p-n diodes, 1,2) lateral Schottky barrier diodes (SBDs), HEMTs, 3,4) bipolar transistors, 5,6) and laser diodes, 7,8) and the gate recess etching of AlGaN/GaN HEMTs, [9][10][11][12][13][14][15][16] Although ICP is widely used for the etching of GaN, plasma-induced damage is a serious concern in terms of device stability and reliability. [17][18][19][20][21] On the other hand, the PEC etching is a basically damage-less etching system because it is a plasma-free process. In the case of a GaN layer on a sapphire substrate, the PEC etching formed a large number of whiskers due to large dislocation-density.…”

Section: Introductionmentioning

confidence: 99%

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Matsuda

Horikiri

Yoshida

et al. 2021

Jpn. J. Appl. Phys.

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We present the experimental results on mapping characterization of the effects of photo-electrochemical (PEC) and inductive coupled plasma (ICP) etchings for both p-type and n-type GaN Schottky contacts by using scanning internal photoemission microscopy to clarify the current transport mechanism. The photoyield (Y) increased in the PEC etched regions by 4%–5% for the n-GaN, by 15% for the p-GaN samples. We proposed a model that the ICP etching induced donor-type damages in the vicinity of the GaN surfaces. In the ICP etched regions, Y increased by 10% for the n-GaN as well, but significantly decreased by 80% for the p-GaN samples. The PEC etching has less effect on the Schottky characteristics than the ICP etching, especially in the p-type sample.

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Section: Introductionmentioning

confidence: 99%

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Matsuda

Horikiri

Yoshida

et al. 2021

Jpn. J. Appl. Phys.

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“…Recently, reactive sputtering techniques employing water vapor (H 2 O) as a reactive gas have been developed and used to deposit active EC oxide thin films. [17][18][19][20][21][22] Previously, we reported that reactive sputtering with substrate cooling and H 2 O injection was a promising technique to obtain Ni oxide thin films with a high deposition rate. 23,24) Although we speculated that the high deposition rate of Ni oxide films was related to the target state, no direct experimental evidence was obtained to support this speculation.…”

Section: Introductionmentioning

confidence: 99%

Metallic-mode reactive sputtering of nickel oxide thin films and characterization of their electrochromic properties

Yokoiwa¹,

Abe²,

Kawamura³

et al. 2019

Jpn. J. Appl. Phys.

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Nickel oxide is a promising electrochromic (EC) material, and it is a material that changes color upon undergoing electrochemical oxidation and reduction. In this study, we prepared nickel oxide thin films by sputtering a nickel metal target using water vapor (H2O) as a reactive gas, and investigated the effects of substrate cooling and water vapor flow ratio in the atmosphere of argon (Ar) gas, RH2O = H2O/(Ar + H2O). High and constant target voltage and plasma emission peaks of Ni atoms were obtained up to RH2O = 75% at ‒80 °C, indicating that the Ni target maintained a metallic state. The deposition rate increased with increasing RH2O when the substrates were cooled, and a maximum deposition rate of 34.6 nm min−1 was obtained at RH2O = 50%. The nickel oxide thin films that were formed in the metallic target mode showed high transmittance in the as-deposited state and good EC properties.

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“…Niobium-doped titanium dioxide (TNO) is an attractive material due to its non-toxicity, low cost, good chemical stability and excellent photoelectrochemical properties. [1][2][3] It has been widely used in various fields including transparent conductive oxides (TCO), 4,5 photocatalysis, 6 electrocatalyst support, 7,8 gas sensor, 9 and solar cells. 10 In the field of solar cells, TNO thin film is very good at electron transport and antireflection.…”

mentioning

confidence: 99%

Improving the Characteristics of Niobium-Doped Titanium Dioxide Nanofilm with Moderate Hydrogen Incorporation

Meng¹

2021

ECS J. Solid State Sci. Technol.

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20 nm thick anatase niobium-doped titanium dioxide (TNO) nanofilm with resistivity of 2.9 × 10−3 Ω·cm, visible-light transmittance of over 92% and work function of 4.43 eV was obtained by radio-frequency magnetron sputtering method and a diluted H2 atmosphere annealing. A rapid annealing in a forming gas atmosphere of 3%H2 and 97%N2 at 500 °C reduced the resistivity by 3 orders of magnitude. Furthermore, the utilization of a “glass cover” (GC) in the annealing process decreased the resistivity by approximately 3 times and increased the refractive index by approximately 3.6% for the anatase TNO nanofilm. The secondary ion mass spectrometry measurement confirmed that the GC restrained the hydrogen diffusion from the surface into TNO occurred during the annealing. Employed as the antireflection layer in hydrogenated amorphous Si solar cells, the TNO nanofilm annealed with GC enabled an open-circuit voltage of 0.91 V, a gain of 6.5% in short-circuit current density and a reduction of 30.3% in series resistance, resulting in a gain of approximately 12.8% in photoelectric conversion efficiency. These results suggest that moderate H incorporation is beneficial for improving the electrical and optical characteristics of TNO thin films.

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Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask

Cited by 30 publications

References 11 publications

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Metallic-mode reactive sputtering of nickel oxide thin films and characterization of their electrochromic properties

Improving the Characteristics of Niobium-Doped Titanium Dioxide Nanofilm with Moderate Hydrogen Incorporation

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