Effective additive for enhancing the performance of Sb2S3 planar thin film solar cells

Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open‐Circuit Voltage

“…[ 22 ] The BEs of S 2p 1/2 and S 2p 3/2 for both film samples are 162.6 and 161.4 eV, respectively (Figure 3d). [ 23 ] Figure 3e shows characteristic peaks of high‐resolution Ce 3d, which presents two pairs of spin‐orbit signals. The peaks located at 904.2 and 885.5 eV can be attributed to Ce 3d 3/2 and Ce 3d 5/2 for the Ce 3+ state in Ce 2 S 3 , respectively.…”

“…As the bias voltage increases and reaches the trap‐filled limiting voltage ( V TFL ), the curve presents a nonlinear feature because of the filling of injected carriers into trap‐states. [ 23 ] The trap‐state density can be estimated by using the equation V TFL = qn τ L 2 /2ε r ε 0 , where n τ is the trap‐state density, q is the elementary charge (1.60 × 10 −19 C), ε 0 is the vacuum permittivity (8.85 × 10 −12 F m −1 ), ε r is the relative permittivity of Sb 2 S 3 (6.67), and L is the thickness of Sb 2 S 3 film (≈280 nm). The V TFL values of the control Sb 2 S 3 and 1%Ce‐Sb 2 S 3 devices are estimated to be 0.418 and 0.350 V, respectively.…”

“…[22] The BEs of S 2p 1/2 and S 2p 3/2 for both film samples are 162.6 and 161.4 eV, respectively (Figure 3d). [23] Figure 3e shows characteristic peaks of highresolution Ce 3d, which presents two pairs of spin-orbit signals.…”

Understanding the effect of TiCl4 treatment at TiO2/Sb2S3 interface on the enhanced performance of Sb2S3 solar cells

“…Figures 7(b) and (c) shows the resulting dark J-V curves exhibiting distinctive inflection points dividing two regions: an ohmic region and a trap-filled limit (TFL) region [63]. The density of trap-state (N traps ) was calculated according to [64], by finding the onset voltage of the TFL region (V TFL ), as shown in figures 7(b) and (c). The TiCl 4 -treated device has a lower V TFL value of 0.14 V compared with the device without TiCl 4 treatment, which has a higher V TFL value of 0.49 V. The N traps value is found to be 11.41 ×10 15 cm −3 for the device based on TiO 2 , whereas the value decreased to 3.26 × 10 15 cm −3 after TiCl 4 treatment.…”

Inhibiting metal-inward diffusion-induced degradation through strong chemical coordination toward stable and efficient inverted perovskite solar cells

“…The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has been rapidly improving in the past decade owing to their tunable bandgap, [1][2][3] high absorption coefficient, [4][5][6] high charge mobility, 7,8 low exciton binding energy, [9][10][11] long carrier diffusion length, [12][13][14] simple process 15,16 and low manufacturing cost. [17][18][19] The PCE of normal (n-i-p) PSCs exceeds 25.5%, 20 while that of inverted PSCs has reached 23.0%.…”