2021
DOI: 10.1016/j.jmat.2021.02.001
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Effective additive for enhancing the performance of Sb2S3 planar thin film solar cells

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Cited by 12 publications
(8 citation statements)
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“…[ 22 ] The BEs of S 2p 1/2 and S 2p 3/2 for both film samples are 162.6 and 161.4 eV, respectively (Figure 3d). [ 23 ] Figure 3e shows characteristic peaks of high‐resolution Ce 3d, which presents two pairs of spin‐orbit signals. The peaks located at 904.2 and 885.5 eV can be attributed to Ce 3d 3/2 and Ce 3d 5/2 for the Ce 3+ state in Ce 2 S 3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…[ 22 ] The BEs of S 2p 1/2 and S 2p 3/2 for both film samples are 162.6 and 161.4 eV, respectively (Figure 3d). [ 23 ] Figure 3e shows characteristic peaks of high‐resolution Ce 3d, which presents two pairs of spin‐orbit signals. The peaks located at 904.2 and 885.5 eV can be attributed to Ce 3d 3/2 and Ce 3d 5/2 for the Ce 3+ state in Ce 2 S 3 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…As the bias voltage increases and reaches the trap‐filled limiting voltage ( V TFL ), the curve presents a nonlinear feature because of the filling of injected carriers into trap‐states. [ 23 ] The trap‐state density can be estimated by using the equation V TFL = qn τ L 2 /2ε r ε 0 , where n τ is the trap‐state density, q is the elementary charge (1.60 × 10 −19 C), ε 0 is the vacuum permittivity (8.85 × 10 −12 F m −1 ), ε r is the relative permittivity of Sb 2 S 3 (6.67), and L is the thickness of Sb 2 S 3 film (≈280 nm). The V TFL values of the control Sb 2 S 3 and 1%Ce‐Sb 2 S 3 devices are estimated to be 0.418 and 0.350 V, respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…Figures 7(b) and (c) shows the resulting dark J-V curves exhibiting distinctive inflection points dividing two regions: an ohmic region and a trap-filled limit (TFL) region [63]. The density of trap-state (N traps ) was calculated according to [64], by finding the onset voltage of the TFL region (V TFL ), as shown in figures 7(b) and (c). The TiCl 4 -treated device has a lower V TFL value of 0.14 V compared with the device without TiCl 4 treatment, which has a higher V TFL value of 0.49 V. The N traps value is found to be 11.41 ×10 15 cm −3 for the device based on TiO 2 , whereas the value decreased to 3.26 × 10 15 cm −3 after TiCl 4 treatment.…”
Section: Effect Of Ticl 4 Treatment On Photovoltaic Performancementioning
confidence: 99%
“…The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has been rapidly improving in the past decade owing to their tunable bandgap, [1][2][3] high absorption coefficient, [4][5][6] high charge mobility, 7,8 low exciton binding energy, [9][10][11] long carrier diffusion length, [12][13][14] simple process 15,16 and low manufacturing cost. [17][18][19] The PCE of normal (n-i-p) PSCs exceeds 25.5%, 20 while that of inverted PSCs has reached 23.0%.…”
Section: Introductionmentioning
confidence: 99%