Effect of Zr/Ti ratio on the microstructure and ferroelectric properties of lead zirconate titanate thin films

Khaenamkaew, Panya; Muensit, Supasarote; Bdikin, Igor; Kholkin, A. L.

doi:10.1016/j.matchemphys.2006.11.019

Cited by 45 publications

(18 citation statements)

References 10 publications

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“…This observed enhanced dielectric property is due to the crystalline behavior of the films in turn to the film processing. Also, these values were comparable to other reported literatures on films having similar thickness [14,15] and PZT bulk ceramic films [16]. Figure 3 shows the variation of dielectric constant of *1 lm thick PZT films with temperature, measured at different frequencies.…”

Section: Dielectric Propertiessupporting

confidence: 88%

“…It had a typical butterfly shape, with two maxima, which should correspond to the coercive field values. This is because the domain wall contribution is maximized due to the large number of coexisting domain walls at these voltages [19]. The capacitance also exhibits a hysteresis loop depending on the sweep direction of the bias voltage, which can be attributed to ferroelectric behavior of the films.…”

Section: Dielectric Propertiesmentioning

confidence: 97%

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Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Jegatheesan

Giridharan

2011

J Mater Sci: Mater Electron

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Pb(Zr x Ti 1-x )O 3 : PZT] films at morphotropic phase boundary composition (x = 0.52) were deposited on bare Si, ZrO 2 /Si and Pt/Ti/SiO 2 /Si substrates by sol-gel spin on technique. Films deposited on the bare Si and ZrO 2 / Si substrates had low degree of crystallization and micro cracks. Well crystallized films with smooth microstructure were obtained on Pt/Ti/SiO 2 /Si substrates. Further, the thickness of the films on Pt/Ti/SiO 2 /Si substrate was increased up to *1 lm by step-by-step crystallization process. The single perovskite phase of the above films was confirmed with X-ray diffraction analysis. Films had enhanced dielectric properties at room temperature and the dielectric constant values were comparable to those of bulk values at Curie temperature (T c ) from the temperature dependent dielectric measurements. Films exhibit higher remnant polarization (P r ) and lower coercive field (E c ) values. Further, capacitance-voltage (C-V), current-voltage (I-V) measurements and rough estimation of piezoelectric coefficient of the films were carried out.

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Section: Dielectric Propertiessupporting

confidence: 88%

Section: Dielectric Propertiesmentioning

confidence: 97%

Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Jegatheesan

Giridharan

2011

J Mater Sci: Mater Electron

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“…For these applications, many researchers have reported that the microstructure, 1) crystal orientation, 2) electrode, 3),4) crystal size, 5) and residual stress 6), 7) are important factors to improve electrical properties in thin films. Therefore, we must control many factors to attain higher electrical properties and to create highperformance devices.…”

Section: Introductionmentioning

confidence: 99%

Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer

Ohno

Malič

Fukazawa

et al. 2009

J. Ceram. Soc. Japan

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This paper specifically examines control of the residual stress in thin films by design of the stacking structure. For this study, we prepared highly a-, c-oriented PZT(30/70) (: PZT30) thin films using chemical solution deposition (CSD). A PZT30 thin film was deposited on LaNiO3 (LNO)/Pt/Ti/SiO2/Si and LNO/SiO2/Si with different LNO layer thickness to control the thermal stress. An LNO layer was also prepared using CSD on a Pt/Ti/SiO2/Si substrate and SiO2/Si substrate. The residual stresses in the PZT30 thin films were estimated using Raman analysis. Furthermore, the dielectric property of samples was measured using an impedance analyzer. Effects of the residual stress on the dielectric behavior were demonstrated through experimentation.

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“…From the result, we considered that the high ferroelectric properties resulted from the compressive stress applied in plane by the LNO bottom electrode. It is significant to understand more precisely the stress state of the BTO film and LNO electrodes using TEM since the properties of the ferroelectric thin films are generally affected by many nano-scale factors such as micro-structure, 19) orientation, 20) particle size, 21) effect of electrode, 22) remnant stress 17) etc. In the present study, the BTO film was precisely investigated by cross sectional TEM observation and the stress distribution in the BTO and LNO films was estimated from lattice parameters at each area of the films.…”

Section: )4)mentioning

confidence: 99%

Stress state analysis of stress engineered BaTiO<sub>3</sub> thin film by LaNiO<sub>3</sub> bottom electrode

Murakoshi

Fukamachi

Sakamoto

et al. 2013

J. Ceram. Soc. Japan

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Ferroelectric materials with excellent performance without containing lead has been desired for saving human body from a harmful element, lead. The authors have reported BaTiO 3 (BTO) thin films with enhanced ferroelectricity by stress engineering by thermal stress assisted by LaNiO 3 (LNO) bottom electrodes. In the present study, we investigate the local stress state of the BTO and LNO films using TEM techniques. TEM observation reveals that the LNO film is porous structure whereas the BTO film is dense. Electron diffraction and dark field images of the films also reveal that the BTO and LNO films oriented along [001] and [100] directions perpendicular to the film plane, respectively. Another effect on the stressed BTO films, increased Curie temperature owing to the stabilized tetragonal phase, is also reported.

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Effect of Zr/Ti ratio on the microstructure and ferroelectric properties of lead zirconate titanate thin films

Cited by 45 publications

References 10 publications

Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer

Stress state analysis of stress engineered BaTiO<sub>3</sub> thin film by LaNiO<sub>3</sub> bottom electrode

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