Effect of Zr substitution on microwave dielectric properties of Zn2SnO4 ceramics

Chen, Yih-Chien; Weng, Min-Zhe; Hong, J.-I.

doi:10.1007/s10854-014-2263-x

Cited by 5 publications

(1 citation statement)

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“…The maximum values of dielectric constant and quality factor (Q 9 f) for Zn 2 (Sn 0.95 Ti 0.05 )O 4 ceramics that were sintered at 1225°C for 4 h are 9.9 and 76,900 GHz, respectively [6]. A dielectric constant of 9.6 and a quality factor (Q 9 f) of 87,000 GHz were obtained for Zn 2 (Sn 0.99 Zr 0.01 )O 4 ceramics that were sintered at 1225°C for 4 h [7]. Additionally, a dielectric constant of 8.1 and a quality factor (Q 9 f) of 55,500 GHz were obtained for Zn 2 (Sn 0.93 Si 0.07 )O 4 ceramics that were sintered at 1175°C for 4 h [8].…”

Section: Introductionmentioning

confidence: 90%

Influence of BaCu(B2O5) aid and sintering temperature on microstructures and microwave dielectric properties of inverse-spinel structure Zn2SnO4 ceramics

Chen

You

Chang

2015

J Mater Sci: Mater Electron

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In this study, the microwave dielectric properties of Zn 2 SnO 4 ceramics prepared by the conventional solid-state method were investigated for application in mobile communication. BaCu(B 2 O 5 ) was selected as a liquid sintering aid to reduce the sintering temperature of Zn 2 SnO 4 ceramics. The X-ray diffraction patterns of the BaCu(B 2 O 5 )-doped Zn 2 SnO 4 ceramic system did not significantly vary with sintering temperature. By adding 0.50 wt% BaCu(B 2 O 5 ), a dielectric constant of 8.8, a quality factor (Q 9 f) of 30,900 GHz, and a temperature coefficient of resonant frequency (s f ) of -88 ppm/°C were obtained when Zn 2 SnO 4 ceramics that were sintered at 1150°C for 4 h.

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Section: Introductionmentioning

confidence: 90%