Effect of Zn substitution on the phase, microstructure and electrical properties of Ni0.6Cu0.5ZnxMn1.9−xO4 (0≤x≤1) NTC ceramics

Ma, Chengjian; Liu, Yunfei; Lü, Yinong; Qian, Hao; Ding, Jianxiang

doi:10.1016/j.mseb.2014.06.011

Cited by 32 publications

(20 citation statements)

References 32 publications

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“…The phenomenon of resistivity dri during the aging test is very consistent with other studies. 30,31 To further clarify the contribution of the grain and grain boundary to the conduction characteristic of MCF ceramics, the AC impedance spectroscopy was engaged in this paper. [32][33][34] Fig.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn_1.1Co_1.5Fe_0.4O₄ ceramics

Wang

Chang

et al. 2019

RSC Adv.

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Section: Electrical Propertiesmentioning

confidence: 99%

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn_1.1Co_1.5Fe_0.4O₄ ceramics

Wang

Chang

et al. 2019

RSC Adv.

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“…For improving the ageing characteristic, much work has been done by cation doping and microstructure modification [9][10][11]. For instance, Ma et al [12] reported that the resistivity drift for Ni 0. 6 [13][14][15][16][17].…”

Section: +mentioning

confidence: 99%

Characterization of new negative temperature coefficient thermistors based on Zn–Ni–O system

Sun

Zhang

et al. 2016

J Adv Ceram

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Y 2 O 3 -doped Zn 1x Ni x O (x = 0, 0.3, 0.4, 0.5, 0.6, 0.7, and 0.9) powders were prepared by a wet chemical synthesis method, and the related ceramics were obtained by the traditional ceramic sintering technology. The phases and related electrical properties of the ceramics were investigated. The analysis of X-ray diffraction (XRD) indicates that the prepared ceramics with Ni substitution have a cubic crystalline structure. The resistance-temperature feature indicates that all the ceramics show a typical effect of negative temperature coefficient (NTC) of resistivity with the thermal constants between 3998 and 5464 K, and have high cyclical stability in a temperature range from 25 to 300 ℃. The impedance analysis reveals that both grain effect and grain boundary effect contribute collectively to the NTC effect. The electron hopping and band conduction models are proposed for the grain (bulk) conduction, and the thermally activated charge carrier transport overcoming the energy barrier is suggested for the grain boundary conduction.

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“…In this regard, adding Zn is known to effectively stabilize the spinel structure against the oxidation reaction when partially replacing Mn in nickel manganite compounds [11,12]. Ma and co-workers investigated the effects of Zn doping on the aging characteristic of Ni 0.6 Cu 0.5 Zn x Mn 1.9−x O 4 ceramics, and they demonstrated that the resistivity drift signi cantly decreased from 10.2% for the undoped samples to 0.02% for the samples with Zn doping of x = 0.75 [13]. The authors also emphasized that the thermal constant (B) of the ceramics was improved by Zn doping.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

2020

Preprint

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Nickel-manganite-based thin films with a negative temperature coefficient of resistance (NTCR) characteristic were prepared from (Ni 0.2 Mn 2.8– x Cu x )Cl 2 (0.010£ x £0.040) solutions using the liquid flow deposition (LFD) method. The influence of Cu on the electrical properties of the films annealed at 400 °C was investigated. Adding Cu ( x = 0.025) was found to quite effectively lower the electrical resistivity ( ρ ) of the films to 200 W cm, whereas their sensitivity behavior was significantly degraded. Interestingly, the absolute temperature coefficient of resistance ( TCR ) of the films was enhanced by further adding 0.01 mol Zn along with Cu, without a remarkable increase in ρ . TCR = 2.98% K – 1 and ρ = 880 W cm at room temperature were attained for the Zn-containing specimen with 0.020 mol Cu doping. Moreover, the films with (Zn,Cu) co-doped compositions showed a much higher electrical stability than the Zn-free films.

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Effect of Zn substitution on the phase, microstructure and electrical properties of Ni0.6Cu0.5ZnxMn1.9−xO4 (0≤x≤1) NTC ceramics

Cited by 32 publications

References 32 publications

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn_1.1Co_1.5Fe_0.4O₄ ceramics

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn_1.1Co_1.5Fe_0.4O₄ ceramics

Characterization of new negative temperature coefficient thermistors based on Zn–Ni–O system

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

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Effect of Zn substitution on the phase, microstructure and electrical properties of Ni0.6Cu0.5ZnxMn1.9−xO4 (0≤x≤1) NTC ceramics

Cited by 32 publications

References 32 publications

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn1.1Co1.5Fe0.4O4 ceramics

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn1.1Co1.5Fe0.4O4 ceramics

Characterization of new negative temperature coefficient thermistors based on Zn–Ni–O system

Electrical properties and aging behavior of nickel manganite thin films co-doped with Cu and Zn annealed at low temperature

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Product

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Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn_1.1Co_1.5Fe_0.4O₄ ceramics

Bismuth trioxide-tailored sintering temperature, microstructure and NTCR characteristics of Mn_1.1Co_1.5Fe_0.4O₄ ceramics