The Bi0.5As1.5Te2.98Se0.02 single crystal in 11 mm?80 mm size was grown using
the Bridgman method. Energy dispersive spectrometry (EDS) analysis was used
to determine the chemical composition of the studied samples, as well as for
checking and confirming the homogeneity of the samples. Mobility,
concentration of charge majority carriers and Hall coefficient of single
crystal, were determined using a Hall Effec system based on the Van der Pauw
method. Hall Effect was measured at room temperature with four ohmic
contacts and at temperature of liquid nitrogen with silver contacts with an
applied magnetic field strength of 0.37 T at different current intensities.
The expected improvement in the mobility of obtained single crystal doped
with this content of arsenic was not obtained.