Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

Abstract

Abstract. The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed.

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

“…But after 60 days, we observed the return to the initial position with clear interference without point dispersion as well as the shift of the high energy parts of spectra to the blue region. This time period is in good agreement with 30-to 60-day period obtained from the photoluminescence measurements of bulk III-V materials [6].…”

“…So, the physical interpretation of the observed modifications is based on the model proposed in [4]. As it was developed in [6], the surface of semiconductor due to WMF treatment is covered by metal component clusters that are mostly unstable and can be destroyed later. After 60 days, the state is similar to the initial one but with a smaller optical thickness d and more prominent and clear interference processes in the lowfrequency shoulder of OR curves (Fig.…”

“…We used two types of beam polarization, s and p. The spectral dependences of the light reflectance for these epitaxial structures were measured using an automated setup based on IKS-12 spectrometer equipped with a device for measuring the angular dependence of reflectance. Since the treatment regime with parameters B = 60 mT, f = 10 Hz, τ = 1.2 ms was the most efficient for bulk III-V semiconductors [6], it was chosen for our experiments. The duration of processing varied within 5 min.…”