2017
DOI: 10.1007/s11082-017-1266-2
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Effect of vacancy defect on optoelectronic properties of monolayer tungsten diselenide

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Cited by 134 publications
(1 citation statement)
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“…The pseudopotentials utilized the valence states of 3p4s3d, 2s 2 2p 5 , and 2s 2 2p 2 for Sc, F, and C, respectively [40]. The projector-augmented wave method was used to describe the interactions between the valence electrons and ionic cores [41,42]. In order to simulate the isolated monolayers, a large vacuum space over 20 Å was used to avoid the interaction between the MXene layers.…”
Section: Computational Detailmentioning
confidence: 99%
“…The pseudopotentials utilized the valence states of 3p4s3d, 2s 2 2p 5 , and 2s 2 2p 2 for Sc, F, and C, respectively [40]. The projector-augmented wave method was used to describe the interactions between the valence electrons and ionic cores [41,42]. In order to simulate the isolated monolayers, a large vacuum space over 20 Å was used to avoid the interaction between the MXene layers.…”
Section: Computational Detailmentioning
confidence: 99%