Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN

Azimah, E.; Zainal, N.; Shuhaimi, Ahmad; Hassan, Z.

doi:10.1016/j.spmi.2015.01.042

Cited by 8 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Sample A 2 was annealed with conventional two-step RTA process [7,10], featured with a high temperature annealing step at 950 °C for 2 min and a low temperature annealing step at 750 °C for 25 min in nitrogen ambient. Sample A 3 was annealed with a recently renovated two-step RTA process [11], i.e. an annealing step at 600 °C for 5 min in oxygen ambient and an annealing step at 750 °C for 25 min in nitrogen ambient.…”

Section: Methodsmentioning

confidence: 99%

“…Particular attention was paid on the effects of multiple-step RTA process on the electrical and the optical properties of the nonpolar a-plane Mg-doped AlGaN epi-layers. It was demonstrated that higher hole concentration and lower resistivity could be obtained for the nonpolar Mg-doped p-AlGaN film with the newlydeveloped multiple-step RTA technique than its counterparts annealed with conventional one-step [5,8,9], two-step [7,10], and the recently renovated two-step [11] RTA methods.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced hole concentration in nonpolara-plane p-AlGaN film with multiple-step rapid thermal annealing technique

Wu¹,

Zhang²,

Fan³

et al. 2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

An innovative multiple-step rapid thermal annealing (RTA) technique was developed for obtaining high hole concentration in the nonpolar a-plane Mg-delta-doped AlGaN films grown on semi-polar r-plane sapphire substrates with metal organic chemical vapor deposition. The structural, optical, and electrical properties of the nonpolar a-plane p-AlGaN epi-layers were characterized with high-resolution x-ray diffraction, photoluminescence spectra, and Hall effect measurement. The characterization results demonstrated that the dissociation efficiency of the Mg-H bonds in the nonpolar a-plane p-AlGaN films could be improved significantly with the multiple-step RTA process. In fact, a hole concentration as high as 1.9 × 10 18 cm −3 was achieved with the multiple-step RTA technique, which was 35%, 9%, and 23% higher than those obtained with conventional one-step, two-step, and the recently renovated two-step RTA methods, respectively.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced hole concentration in nonpolara-plane p-AlGaN film with multiple-step rapid thermal annealing technique

Wu¹,

Zhang²,

Fan³

et al. 2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[43,44] For example, the formation of the Mg─H bond during the growth may be a limiting factor to obtain highly conductive p-type AlGaN epilayers grown by MOCVD, although annealing has been found to be effective in disassociating the Mg─H bond in gallium nitride (GaN) and highly conductive p-type GaN layers have been achieved. [45][46][47] It is also noted that with improving the growth conditions, the MOCVD-grown p-type AlGaN epilayers have shown an improved p-type conductivity. [48][49][50][51][52][53] The challenges related to the fundamental physical properties of AlGaN alloys are perhaps more severe for the laser development.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Zhang

Yin

Zhao

2021

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4-6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.

show abstract

“…© 2023 The Japan Society of Applied Physics driving force for Mg diffusion, breaking up Mg-H complexes and inducing higher diffusivity of the Mg dopant, which enhance the activation of Mg acceptors in p-GaN. 10,29) In summary, the supercritical fluid treatment process was introduced before the traditional RTA process to better realize the activation of Mg acceptors in p-GaN. The PL spectra results at room temperature indicated that the "SCN 2 O+RTA" treatment can effectively suppress the luminescence band originating from V N -related defects.…”

mentioning

confidence: 99%

Activation of Mg impurities in epitaxial p-GaN with rapid thermal annealing assisted supercritical fluid treatment

Yang

Zhang

et al. 2023

Appl. Phys. Express

View full text Add to dashboard Cite

The activation of Mg acceptor in p-GaN with rapid thermal annealing (RTA) assisted low-temperature supercritical fluid (SCF) treatment (RTA-A-SCF) was investigated. After RTA-A-SCF treatment, the luminescence band of N vacancy in PL spectra was significantly suppressed. An evident decrease of H concentration is also observed in secondary ion mass spectrometer (SIMS) measurements, it indicates an obvious decrease of Mg-H complexes in the p-GaN. In addition, the ohmic contacts has been well improved and the hole concentration has increased by an order of magnitude . The activation mechanism of RTA-A-SCF treatment was further analyzed by X-ray photoelectron spectroscopy (XPS).

show abstract

Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN

Cited by 8 publications

References 19 publications

Enhanced hole concentration in nonpolara-plane p-AlGaN film with multiple-step rapid thermal annealing technique

Enhanced hole concentration in nonpolara-plane p-AlGaN film with multiple-step rapid thermal annealing technique

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Activation of Mg impurities in epitaxial p-GaN with rapid thermal annealing assisted supercritical fluid treatment

Contact Info

Product

Resources

About