Effect of uniaxial stress on dynamics of electronic excitations in alkali halides

Babin, V.; Bekeshev, A. Z.; Elango, A.; Kalder, K.; Shunkeev, K. Sh.; Vasil’chenko, E.; Zazubovich, S.

doi:10.1016/s0022-2313(97)00244-5

Cited by 17 publications

(13 citation statements)

References 6 publications

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“…Our preliminary data obtained under stress supplied at 4.2 K have been reported briefly in [17]. We have found that the application of uniaxial stress at 4.2 K results in the total reduction of the intensities of all the emission bands excited in the exciton absorption region (Fig.…”

Section: The Effect Of the Uniaxial Stress On The Ste And The Impuritmentioning

confidence: 56%

“…A drastic decrease of the %4.25 eV emission intensity under uniaxial stress supplied at 80 K is detected in [14], while the intensity of the oncentre STE emission should increase under stress (see, e.g. [17] and references therein). Thus, we conclude that this it is not the s emission of the STE but the 4.25 eV emission studied in the present paper which is responsible for the effects observed in [7,14,16].…”

Section: Resultsmentioning

confidence: 99%

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Effect of Uniaxial Stress on Exciton Luminescence in CsI Crystals

Babin¹,

Elango²,

Kalder³

et al. 1999

phys. stat. sol. (b)

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Section: The Effect Of the Uniaxial Stress On The Ste And The Impuritmentioning

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Effect of Uniaxial Stress on Exciton Luminescence in CsI Crystals

Babin¹,

Elango²,

Kalder³

et al. 1999

phys. stat. sol. (b)

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“…The application of an uniaxial compression leads to a strong increase in the emission of STE [15]. Moreover, the σ -and π -luminescence of STE increase almost identically.…”

Section: Resultsmentioning

confidence: 92%

The nature of luminescence of KI and KI-Na crystals at low temperature deformation after natural decrease in the symmetry of the lattice

Shunkeyev¹,

Zhanturina²,

Myasnikova³

et al. 2018

Eurasian j. phys. funct. mater.

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The X-ray luminescence spectra at low temperature (90K) uniaxial deformation were researched for KI and KI-Na crystals, that were stored for more than 10 years. The following regularities were observed: firstly, the intensities of the intrinsic emission bands at 3.3 eV ( π ) and 4.1 eV ( σ ) become equal in comparison with freshly grown crystals; and secondly, with an increase in the degree of low-temperature uniaxial deformation, a gradual shift of the emission spectra occurs in two directions: the luminescence maximum at 3.3 eV shifts towards short wavelengths, the final position is fixed at 3.9 eV, which practically merges with σ -luminescence; the radiation maximum at 3.0 eV (Ex-radiation) is shifted toward long wavelengths, the final position which is fixed at 2.8 eV. Thus, low temperature uniaxial deformation leads to the separation of the emission spectra at 3,3 eV( π ) → 3,9 eV and 3.0 eV ( E x ) → 2,8 eV, which are interpreted by the separation of weak → on and weak → strong exciton configurations , respectively.

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“…This study also suggested that the application of large isostatic pressures could affect scintillator electronic band structure and lead to important insight into this relationship. It is known that pressure affects the migration and recombination properties of free charge carriers and excitons (through self-trapping, change in exciton binding energies, 9,10 hopping and stability of states [11][12][13][14][15][16][17][18] the deposited energy to photon-yield ratio as confirmed by a few high isostatic pressure scintillation studies. For example, 30 MPa of isostatic pressure induces a change in the light yield and energy response of Tl:NaI excited by γ rays.…”

Section: Introductionmentioning

confidence: 94%

An apparatus for studying scintillator properties at high isostatic pressures

Gaumé

Lam

Gascón

et al. 2013

Review of Scientific Instruments

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We describe the design and operation of a unique hydraulic press for the study of scintillator materials under isostatic pressure. This press, capable of developing a pressure of a gigapascal, consists of a large sample chamber pressurized by a two-stage hydraulic amplifier. The optical detection of the scintillation light emitted by the sample is performed, through a large aperture optical port, by a photodetector located outside the pressure vessel. In addition to providing essential pressure-dependent studies on the emission characteristics of radioluminescent materials, this apparatus is being developed to elucidate the mechanisms behind the recently observed dependency of light-yield nonproportionality on electronic band structure. The variation of the light output of a Tl:CsI crystal under 511-keV gamma excitation and hydrostatic pressure is given as an example.

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Effect of uniaxial stress on dynamics of electronic excitations in alkali halides

Cited by 17 publications

References 6 publications

Effect of Uniaxial Stress on Exciton Luminescence in CsI Crystals

Effect of Uniaxial Stress on Exciton Luminescence in CsI Crystals

The nature of luminescence of KI and KI-Na crystals at low temperature deformation after natural decrease in the symmetry of the lattice

An apparatus for studying scintillator properties at high isostatic pressures

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