Effect of uniaxial stress on the electron spin resonance in zinc-blende semiconductors

Rocca, G. C. La; Kim, Nammee; Rodríguez, S.

doi:10.1103/physrevb.38.7595

Cited by 21 publications

(14 citation statements)

References 7 publications

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“…For these two directions only, the B int in H 3 is perpendicular to the momentum and the electric field, hence satisfying a major constraint the experimental data poses on the theory. Since the value of the constant D is unknown from previous experimental studies (although it was suggested that they can be sometimes sizable [32]) there is no way of theoretically predicting the values of the spin-splitting from our model. However, we can check if the model is consistent with the experimental data and we can also obtain a value of the constant D which, being a material constant, should be similar on all the samples cited here.…”

Section: Fig 1: Direction Of the Internal Magnetic Fieldmentioning

confidence: 99%

Spin splitting and spin current in strained bulk semiconductors

Bernevig

Zhang

2005

Phys. Rev. B

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We present a theory for two recent experiments in bulk strained semiconductors [1,2] and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced in the samples studied in [1,2] for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors. 72.15. Gd Spin manipulation in semiconductors has seen remarkable theoretical and experimental interest in recent years with the advent of spin-electronics and with the realization that strong spin-orbit coupling in certain materials can influence the transport of carriers in so-called spintronics devices [3]. In particular, the issue of creating spin polarization of carriers in nonmagnetic semiconductors with spin-orbit coupling using only electric fields has caused a flurry of theoretical and experimental activity [4,5,6,7,8,9,10,11,12,13,14,15,16]. Two kinds of theories of spin-polarization under the action of an electric field have been put forward. The first kind, dating back since the mid 1980's [9], predicts the existence of a spatially homogeneous net spin polarization perpendicular to the applied electric current in two dimensional samples with spin-orbit interaction. This effect is dissipative and has been recently observed experimentally [17]. There also exist two very recent [4,5] theories predicting non-dissipative, intrinsic spin currents with the spin polarization and flow direction perpendicular to each other and to the electric field. This effect does not create a bulk magnetization but, if observed, can be used for spin injection, and its validity is being experimentally tested at the present time. One of the theories [5] predicts a spin current polarized out of plane and flowing perpendicular to the in-plane electric field applied on a 2-dimensional semiconductor sample exhibiting Rashba spin-orbit coupling. As long as the Rashba spin splitting is large enough, the spin conductivity is 'universal' (e/8π ) in the sense that it does not depend on the value of the coupling. The other effect [4] appears in the valence band of the bulk samples and is proportional to the spin-orbit splitting of the valence bands (to the difference between the Fermi momenta of the heavy and light-hole bands).In the first part of this letter we analyze the theory behind two recent experiments in bulk strained semiconductors [1,2] where an electric-field-induced uniform homogeneous spin polarization upon an applied electric field is observed. We make the case that the observed spinsplitting (whose origin is puzzling) and spin polarization is due to a previously overlooked strain-spin-splitting term, and propose easy experimental checks of our theory.In the second part of this letter we predict the appearance of an intrinsic spin po...

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Section: Fig 1: Direction Of the Internal Magnetic Fieldmentioning

confidence: 99%

Spin splitting and spin current in strained bulk semiconductors

Bernevig

Zhang

2005

Phys. Rev. B

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“…(1) with an SOI parameter R ] and the intrinsic bulk inversion asymmetry (Dresselhaus SOI [22] described by D ), respectively. In the present system, we consider three additional contributions described by SAW ) is induced by the off-diagonal (diagonal) components of strain tensor" [23][24][25]. Hence, and in Eq.…”

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confidence: 99%

“…(ÁE c and ÁE v represent conduction and valence band offsets, respectively) [21], SAW S ¼ C 3 " XY =2, and SAW S ¼ Dð" XX À " ZZ Þ [23][24][25]. Here, the following material constants were used: r 6c6c 41 ¼ 5:206 Â 10 À20 e m 2 [21], ðÁE c þ ÁE v Þ=ÁE c ¼ 1:636, C 3 ¼ 8:1 Â 10 À10 eV m [17], and D ¼ 6:6 Â 10 À12 eVm [25].…”

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confidence: 99%

Acoustically Induced Spin-Orbit Interactions Revealed by Two-Dimensional Imaging of Spin Transport in GaAs

et al. 2011

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Magneto-optic Kerr microscopy was employed to investigate the spin-orbit interactions of electrons traveling in semiconductor quantum wells using surface acoustic waves (SAWs). Two-dimensional images of the spin flow induced by SAWs exhibit anisotropic spin precession behaviors caused by the coexistence of different types of spin-orbit interactions. The dependence of spin-orbit effective magnetic fields on SAW intensity indicates the existence of acoustically controllable spin-orbit interactions resulting from the strain and Rashba contributions induced by the SAWs.

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“…6 Strain breaks spatial inversion symmetry, which results in additional k-dependent spin splittings. [7][8][9] Strain-induced spin precession and characterization of k-linear spin splitting have been conducted in lattice-mismatched heterostructures 10 and using a mechanical vise. [11][12][13] Measurements on lattice-mismatched heterostructures observed both BIA-and SIA-type splitting but the splitting did not exhibit a clear trend as a function of measured strain.…”

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confidence: 99%

“…[7][8][9] Here x, y, and z denote the ͓100͔, ͓010͔, and ͓001͔ crystal axes, i denotes the ith Pauli matrix, ⑀ ij are the components of the strain tensor with ⑀ xy = ⑀ yx and ⑀ xx = ⑀ yy , and , ␣, D, and C 3 are material constants. H R and H 2 have the same direction dependence on momentum while H 1 has the same form as the linear Dresselhaus field for a two-dimensional system with quantum confinement along ͓001͔.…”

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confidence: 99%

Mapping spin-orbit splitting in strained (In,Ga)As epilayers

et al. 2010

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Time-resolved and spatially resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are coherently strained and therefore designed to reduce inhomogeneous effects related to strain relaxation. Measurements of momentum-dependent spin splitting as a function of electron spin drift velocity along ͓100͔, ͓010͔, ͓110͔, and ͓110͔ directions enable separation of isotropic and anisotropic effective magnetic fields that arise from uniaxial and biaxial strain along ͗110͘. We find that the anisotropic and isotropic strain-induced effective magnetic fields are comparable in magnitude, contrary to previous predictions.

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Effect of uniaxial stress on the electron spin resonance in zinc-blende semiconductors

Cited by 21 publications

References 7 publications

Spin splitting and spin current in strained bulk semiconductors

Spin splitting and spin current in strained bulk semiconductors

Acoustically Induced Spin-Orbit Interactions Revealed by Two-Dimensional Imaging of Spin Transport in GaAs

Mapping spin-orbit splitting in strained (In,Ga)As epilayers

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