Effect of ultraviolet-illumination and sample ambient on photoluminescence from zinc oxide nanocrystals

Linear and nonlinear optical properties of ZnO thin films deposited by pulsed laser deposition

“…The intensity of this peak is about similar to the intensity of the second peak and about ten times higher than the intensity of the third peak. The second peak localized in the range from 3.3eV (375nm) to 3.1eV (400nm) is due to a sub-band transitions [16][17]. A detailed analysis of the spectrum shows an additional broad band in the range: 2.7-2.9eV (460-430nm).…”

“…The first peak is localized at around 3.34eV (371nm) and correspond to the band to band transition. The second peak localized 3.13eV (395nm) is due to a sub-band transitions [16][17]. As in the case ZnO thin film deposited at room temperature the temperature dependent PL investigations showed that the bandgap energy decreased with increasing temperature of PL measurements causing common bandgap shrinkage, but this shrinkage is much lower.…”

Characterization of the Dynamics of Photoluminescence Degradation in Aqueous CdTe/CdS Core-Shell Quantum Dots

“…This constitutes a very different environment from a cell interior [16,17] or when the quantum dots are in suspension [18,19], for example. Since the environment can strongly affect the luminescence of semiconductor nanocrystals [20], the high sensitivity of quantum optics applications to imperfections makes it paramount to have a more complete understanding of how this environment affects the quality of the emitted light, when one wants to use the quantum dots as a light source for quantum optics applications.…”

Unraveling the mechanism of ultraviolet-induced optical gating in Zn1−xMgxO nanocrystal solid solution field effect transistors

“…Indeed, addition of Mg in ZnO bulk films has exhibited interesting features including visible light emission in which the wave length can be altered in the visible range [10,15,16]. Tuning of emission wavelength has been attributed to recombination of carriers with oxygen vacancyinduced defect centers of dif ferent charge states [17,18]. Despite extensive research motivated by the interesting electronic and optical features of alloyed Zn 1−x Mg x O bulk films as mentioned above, surprisingly, understanding of Zn 1−x Mg x O in a nanocrystalline solid solution form lags behind that of bulk Zn 1−x Mg x O films.…”