Effect of ultrasonic vibration on polishing monocrystalline silicon: surface quality and material removal rate

Yu, Tianbiao; Wang, Zhihui; Guo, Xuepeng; Xu, Pengfei; Zhao, Ji; Chen, Lijie

doi:10.1007/s00170-019-03385-y

Cited by 13 publications

(4 citation statements)

References 32 publications

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“…This could be attributed mainly due to the provision of ultrasonic vibration in the polishing zone which causes an increase in the friction coefficient and also increases the adhesion amongst the abrasive particles and the wafer surface. 45 This in turn results in preventing the agglomeration of abrasive particles and accelerate the restoration of polishing slurry in the polishing zone, which further promotes the highenergy impact of abrasives. 46,47 Such abrasive impaction over the surface enhances the cutting ability of abrasives and results in improving the MRR.…”

Section: Effect Of Interaction On Mrrmentioning

confidence: 99%

“…At the optimum polishing speed of 650 rpm, sufficient centripetal force acts on the abrasive particles, which holds it in the brush of MR fluid formed at the upper magnetic disc. Also, with the increased ultrasonic power (100%), very few polishing marks were observed over the wafer surface, mainly due to the higher indentation depth of abrasive particles [45] on the softened surface of silicon wafer. Due to this, the material removal rate of wafer surface increases as the ultrasonic power increases.…”

Section: Observation Of Surface Texture Generated By Ua-ddcamrfmentioning

confidence: 99%

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The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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The present experimental investigation attempts to understand and address the effect of ultrasonic vibrations on material removal in the polishing of silicon wafers (1 0 0). The requisite finishing experimentations were performed on an indigenously developed experimental arrangement of double-disc chemical assisted magnetorheological finishing (DDCAMRF) process with longitudinal vibrations. The MR fluid used in the experiments consists of a water-based suspension prepared by mixing suitable amounts of carbonyl iron particles (CIPs), abrasive particles, and additives or stabilizers. The prepared MR fluid uses both mechanics and chemistry to finish the silicon surface. Mechanics is mainly responsible for micro-scratching of silicon surface, which gets “softened” by hydration utilizing DI water in the MR fluid. In this study, the ‘response surface methodology (RSM)’ was chosen for designing the experiments to evaluate the significance of different process factors, namely polishing speed, abrasive concentration, and ultrasonic power on the material removal rate (MRR) in DDCAMRF process. The material removed from the wafer surface was measured using the precision digital weighing balance. It was observed that the MRR was found to increase with the increase in various process factors used. Further, analysis of variance (i.e., ANOVA) technique with a 95% confidence interval was performed to analyze the significant contribution of different process factors on MRR. The validation of developed model was done by performing experiments on random and optimized set of process factors. From, the statistical investigation it was discovered that ultrasonic power has highest contribution of 57.9% on MRR, followed by the polishing speed (13.3%), and abrasive concentration (12.5%). Furthermore, a genetic algorithm optimization tool was utilized to obtain optimum set of process parameters to maximize MRR.

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Section: Effect Of Interaction On Mrrmentioning

confidence: 99%

Section: Observation Of Surface Texture Generated By Ua-ddcamrfmentioning

confidence: 99%

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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“…CMP is regarded as a critical technology to achieve high-quality surfaces, but the relatively weak mechanical removal action and chemical effect applied on the SiC wafer by SiO 2 slurry lead to low polishing efficiency. 5 To realize the high-efficiency and highprecision machining of SiC, Yin et al 6 proposed a novel polishing technique that combines anodic oxidation and mechanical polishing (AOMP), Yan et al 7 proposed an ultraviolet (UV) photocatalysis-assisted polishing method, Yu et al 8 employed ultrasonic vibration-assisted polishing (UVP) of single-crystal SiC, but these methods were complicated. Another way to improve the machining efficiency is to improve the surface quality of SiC wafer in semi finishing stage to reduce CMP polishing time, the conventional semi finishing method is to use resin copper disc and diamond slurry.…”

Section: Introductionmentioning

confidence: 99%

Ultra-precision grinding of 4H-SiC wafer by PAV/PF composite sol-gel diamond wheel

Feng

Zhao

Lyu

et al. 2021

Advances in Mechanical Engineering

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To eliminate the deep scratches on the 4H-SiC wafer surface in the grinding process, a PVA/PF composite sol-gel diamond wheel was proposed. Diamond and fillers are sheared and dispersed in the polyvinyl alcohol-phenolic resin composite sol glue, repeatedly frozen at a low temperature of −20°C to gel, then 180°C sintering to obtain the diamond wheel. Study shows that the molecular chain of polyvinyl alcohol-phenolic resin is physically cross-linked to form gel under low-temperature conditions. Tested by mechanical property testing machines, microhardness tester, and SEM. The results show that micromorphology is more uniform, the strength of the sol-gel diamond wheel is higher, the hardness uniformity is better than that of the hot pressing diamond wheel. Grinding experiments of 4H-SiC wafer were carried out with the prepared sol-gel diamond wheel. The influence of grinding speed, feed rate, and grinding depth on the surface roughness was investigated. The results showed that by using the sol-gel diamond wheel, the surface quality of 4H-SiC wafer with an average surface roughness Ra 6.42 nm was obtained under grinding wheel speed 7000 r/min, grinding feed rate 6 µm/min, and grinding depth 15 µm, the surface quality was better than that of using hot pressing diamond wheel.

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“…A MRR model of single abrasive was developed and polishing experiments were conducted. The results reveal that ultrasonic polishing can significantly improve the MRR and obtain better surface quality compared to the conventional mechanical polishing [9]. Xu et al performed ultrasonic flexural vibration assisted chemical mechanical polishing on the sapphire substrates.…”

Section: Introductionmentioning

confidence: 99%

A New Vibration Device Applied for Two-Dimensional Ultrasonic Polishing of Biomaterials

Lin

Yan

et al. 2019

IEEE Access

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For the research of the performance of two-dimensional ultrasonic polishing (TDUP) on the biomaterials, a new vibration device was designed. Meanwhile, our aim is to study the mechanism of multiangle polishing to cope with the complex structure of biomaterials. The device is composed of piezoelectric rings, asymmetric transformer, ultrasonic generator, and so on. The structural dimension parameters were optimized by finite element analysis, and especially the groove size on the transformer was discussed in detail. Two kinds of experiments had been conducted to test the performance of the proposed device, including impedance analysis experiments and amplitudes measurement experiments. Furthermore, a mechanical model to explain the principle of the multiangle polishing was set up, which could assist to analyze the influence of different polishing angles in terms of machining. Finally, the machining experiments and multiangle polishing experiments were carried out to verify the effectiveness of the device. Compared with traditional mechanical polishing, the surface roughness is reduced from 235 nm to 140 nm. The results of multiangle polishing experiments indicate that the surface quality of biomaterials will be prominently affected by different polishing angles. In addition, the polishing mechanism will transform owing to the inversion of the normal velocity during the polishing process with the angle increasing. The surface morphology will also be affected. It has been proven that the experimental results agree with the model well.

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Effect of ultrasonic vibration on polishing monocrystalline silicon: surface quality and material removal rate

Cited by 13 publications

References 32 publications

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

Ultra-precision grinding of 4H-SiC wafer by PAV/PF composite sol-gel diamond wheel

A New Vibration Device Applied for Two-Dimensional Ultrasonic Polishing of Biomaterials

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