We fabricated randomly-oriented polycrystalline BaSi2 films on TiN metal layers by sputtering for the deployment of BaSi2 solar cells on a flexible substrate. The formation of BaSi2 films was demonstrated by X-ray diffraction and Raman spectroscopy. The photoresponsivity increased at wavelengths < 1000 nm, corresponding to the bandgap of BaSi2, and reached 1.6 A/W at a wavelength of 650 nm under a bias voltage of 0.5 V applied to the front ITO electrode with respect to the TiN layers. This value is equivalent to the highest value ever achieved for undoped BaSi2 epitaxial films by molecular beam epitaxy.