Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

Dixit, V. K.; Ganguli, Tapas; Sharma, T. K.; Singh, S. D.; Kumar, Ravi; Porwal, S.; Tiwari, Pragya; Ingale, Alka; Oak, S. M.

doi:10.1016/j.jcrysgro.2008.05.003

Cited by 41 publications

(29 citation statements)

References 28 publications

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“…The growth morphology of the GaP is typically rough, whether grown on wire arrays or on planar Si substrates included in the same growth run. 7 X-ray diffraction measurements show that the epitaxial GaP is preferentially oriented in the ͗111͘ direction, matching the orientation of the Si wire array substrates, as shown in Fig. 2.…”

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confidence: 60%

Conformal GaP layers on Si wire arrays for solar energy applications

Tamboli

Malhotra

Kimball

et al. 2010

Applied Physics Letters

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We report conformal, epitaxial growth of GaP layers on arrays of Si microwires. Silicon wires grown using chlorosilane chemical vapor deposition were coated with GaP grown by metal-organic chemical vapor deposition. The crystalline quality of conformal, epitaxial GaP/Si wire arrays was assessed by transmission electron microscopy and x-ray diffraction. Hall measurements and photoluminescence show p-and n-type doping with high electron mobility and bright optical emission. GaP pn homojunction diodes on planar reference samples show photovoltaic response with an open circuit voltage of 660 mV.

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confidence: 60%

Conformal GaP layers on Si wire arrays for solar energy applications

Tamboli

Malhotra

Kimball

et al. 2010

Applied Physics Letters

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“…5(c)) shows the Si core and GaP coating in cross section. The GaP coating is conformal and rough, both on the wire array samples and the planar Si substrates, indicating that the roughness of the layer is caused by the polar on nonpolar nature of the epitaxy rather than the nature of the substrate [9]. X-ray diffraction measurements (Fig.…”

Section: Methodsmentioning

confidence: 98%

GaP/Si wire array solar cells

Tamboli

Turner-Evans

Malhotra

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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Si wire arrays have recently demonstrated their potential as photovoltaic devices [1][2][3]. Using these arrays as a base, we consider a next generation, multijunction wire array architecture consisting of Si wire arrays with a conformal GaNxP1-x-yAsy coating. Optical absorption and device physics simulations provide insight into the design of such devices. In particular, the simulations show that much of the solar spectrum can be absorbed as the angle of illumination is varied and that an appropriate choice of coating thickness and composition will lead to current matching conditions and hence provide a realistic path to high efficiencies. We have previously demonstrated high fidelity, high aspect ratio Si wire arrays grown by vaporliquid-solid techniques, and we have now successfully grown conformal GaP coatings on these wires as a precursor to considering quaternary compound growth. Structural, optical, and electrical characterization of these GaP/Si wire array heterostructures, including x-ray diffraction, Hall measurements, and optical absorption of polymer-embedded wire arrays using an integrating sphere were performed. The GaP epilayers have high structural and electrical quality and the ability to absorb a significant amount of the solar spectrum, making them promising for future multijunction wire array solar cells.

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“…The formation of APDs should be hindered on silicon (001) substrates with surface miscut over 4 along the [110] direction. 4,7 This is due to the biatomic steps which are formed spontaneously on these surfaces. However, it should be mentioned that there always exist atomic steps with monoatomical height on misoriented substrates although the formation of biatomic steps is favored.…”

Section: B Antiphase Disorder In Gap Layersmentioning

confidence: 99%

“…This approach is much more simple and requires no sensitive annealing process. [4][5][6][7] However, solving APD problems is not sufficient for fabrication of a high-quality layer. Other issues may also degrade the crystal quality.…”

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confidence: 99%

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Jussila

Nagarajan

Huhtio

et al. 2012

Journal of Applied Physics

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This paper examines the structural properties of gallium phosphide layers by high resolution x-ray diffraction and atomic force microscopy measurements. GaP layers are grown on misoriented and nominally exactly oriented silicon (001) substrates by metalorganic vapor phase epitaxy. Structural characterization is performed by reciprocal lattice map and transverse scan measurements of (00l)-reflections (l = 2, 4, 6). Transverse scan line profiles of GaP layers on exactly oriented and misoriented substrates are compared thoroughly and antiphase disorder related satellite peaks are observed on exactly oriented substrates. In addition, results imply that antiphase disorder is self-annihilated on misoriented substrates. The dependence of crystallographic tilt on growth temperature indicates structural coherence. Williamson-Hall-like plot of transverse scans reveals the lateral correlation length of crystalline defects of 79 nm which gives the average size of the mosaic crystallites. In addition, the mosaicity of the GaP layer is 0.042°.

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Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

Cited by 41 publications

References 28 publications

Conformal GaP layers on Si wire arrays for solar energy applications

Conformal GaP layers on Si wire arrays for solar energy applications

GaP/Si wire array solar cells

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

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