Effect of trench structure on the quality of InGaAs layers grown on patterned GaAs (111) A substrates

Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate

“…Recently, special attention has been paid to the selective epitaxial growth of III-V compound semiconductors to restrict defect propagation into the grown epitaxial layer. A number of recent articles have reported the selective growth of binary and ternary III-V semiconductors by LPE [6][7][8][9][10][11][12][13][14][15][16] and CCLPE [17][18][19][20]. Selective growth by LPE with changing mask layers and mask openings was also investigated [21][22].…”

Optimization of initial growth in low-angle incidence microchannel epitaxy of GaAs on (001) GaAs substrates

“…By using MCE, dislocation-free GaAs and InP epitaxial layers on Si substrates have been produced [4,5], and devices made up of an array of AlGaAs/GaAs lasers on a Si substrate have been fabricated [6]. The dislocation density has also been reduced by using liquid-phase epitaxy (LPE) for InGaAs/GaAs [7,8] and metalorganic vapor-phase epitaxy for GaN/SiC and GaN/sapphire [9][10][11][12].…”

Growth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy

“…By using this technique, dislocation-free GaAs and InP epitaxial layers even on Si substrate have been obtained [1][2][3][4] and new devices involving an array of AlGaAs/GaAs lasers on Si substrate have been fabricated [5]. The reduction of dislocation density has also been accomplished using LPE for InGaAs/GaAs [6,7] and metalorganic vapor phase epitaxy (MOVPE) for GaN/SiC and GaN/sapphire [8][9][10][11].…”