2007
DOI: 10.1109/led.2007.894652
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Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

Abstract: The influence of top electrode material on the resistive switching properties of ZrO 2 -based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO 2 /Pt and Al/ZrO 2 /Pt devices, the Ti/ZrO 2 /Pt device exhibits different resistive switching current-voltage (I-V ) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersi… Show more

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Cited by 310 publications
(161 citation statements)
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“…Zirconium oxide is also widely used in heterogeneous catalysis [6,7], and more recently it was examined for high-k dielectrics in metal-oxide-semiconductor field-effect transistor (MOSFET) devices [8,9] as well as resistive switching devices [10,11]. In all of these technologically important applications, understanding the defect chemistry and transport properties is key to better material design, device engineering, and performance modeling.…”
Section: Introductionmentioning
confidence: 99%
“…Zirconium oxide is also widely used in heterogeneous catalysis [6,7], and more recently it was examined for high-k dielectrics in metal-oxide-semiconductor field-effect transistor (MOSFET) devices [8,9] as well as resistive switching devices [10,11]. In all of these technologically important applications, understanding the defect chemistry and transport properties is key to better material design, device engineering, and performance modeling.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 7(b) shows the pulse switching measurement of the ZrO 2 stack RRAM up to 3.8 × 10 4 pulse cycles. This pulse switching cycle is superior to the maximum switching cycles of 1.0 × 10 4 reported in literature [31][32][33][34][35] for the ZrO 2 -based RRAM at unipolar or bipolar operation, indicating the ZrO 2 stack film obviously improves endurance for a ZrO 2 -based RRAM.…”
Section: Methodsmentioning
confidence: 66%
“…33) Compared with Pt/ ZrO2/Pt and Al/ZrO2/Pt devices, Ti/ZrO2/Pt device exhibits better resistive switching properties. For example, the resistive switching parameters of the Pt/ZrO2/Pt and Al/ZrO2/Pt devices exhibited a broad dispersion during continuous resistive switching cycles, but those dispersions are suppressed by using Ti as a top electrode for Ti/ZrO2/Pt device.…”
Section: )mentioning
confidence: 96%