Effect of titanium doping on conductivity, density of states and conduction mechanism in ZnO thin film

Jamil, Arifa; Fareed, S.; Tiwari, Nidhi; Li, Chuanbo; Cheng, Buwen; Xu, Xiulai; Rafiq, M. A.

doi:10.1007/s00339-019-2544-6

Cited by 17 publications

(5 citation statements)

References 50 publications

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“…The images reveal that the growth of the nanocomposite samples has aligned and semi-aligned mixed nanorod (NR) arrays on the substrates due to the high thermal coefficient of the PTFE substrate [40,41]. It is evident that the increase in the density and size of the NRs appears as a result of the incorporation of Ti ions (cation) into the interstitial site of ZnO (anion) NRs through the progression of the deposition stages of the samples and due to the fact that the crystal radii of Ti ions are lower than Zn radii at wide coordinates [42,43]. The formed cation-anion compound is observed to have a proliferated growth, with an agglomeration of TiO 2 .…”

Section: Morphology and Elemental Compositionmentioning

confidence: 99%

Characterization and Growth of TiO2/ZnO on PTFE Substrates at Different Volumetric Ratios Using Chemical Bath Deposition

et al. 2023

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Developing non-toxic, semiconductor-doped heterojunction materials for optoelectronic applications on the surface of a flexible substrate is a viable strategy for meeting the world’s energy needs without introducing any environmental issues. In this paper, Ti:TiO2/ZnO nanocomposites were prepared by heat treatment and utilized as an active layer in UV photodetectors. First, a ZnO seed layer was deposited by radio frequency (RF) sputtering on polytetrafluoroethylene (PTFE) substrates. Then, TiO2/ZnO thin films (TFs) were successfully grown by combining volumetric mixtures of TiO2 and ZnO at the ratios of 1:7, 1:3, 3:5, and 1:1 via the chemical bath deposition (CBD) method. The morphological, elemental, and topographical analyses of the grown TFs were investigated through SESEM, EDX, and AFM spectroscopy, respectively. XRD patterns illustrated the presence of the unified (002) peak of the Ti/ZnO hexagonal wurtzite structure in all prepared samples, with intensities indicating a very strong preferential crystallinity with increasing TiO2 ratios. Enhanced diffuse reflectance curves were obtained by UV–Vis spectroscopy, with allowed indirect energy bandgaps ranging from 3.17 eV to 3.23 eV. FTIR characterization revealed wider phonon vibration ranges indicating the presence of Ti–O and Zn–O bonds. Metal–semiconductor–metal (MSM) UV photodetectors were fabricated by thermally evaporating Ag electrodes on the grown nanocomposites. The volumetric ratio of TiO2/ZnO impacted the photodetector performance, where the responsivity, photosensitivity, gain, detectivity, rise time, and decay time of 0.495 AW−1, 247.14%, 3.47, 3.68 × 108 jones, 0.63 s, and 0.99 s, respectively, were recorded at a ratio of 1:1 (TiO2:ZnO). Based on the results, the heterostructure nanocomposites grown on PTFE substrates are believed to be highly promising TF for flexible electronics.

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Section: Morphology and Elemental Compositionmentioning

confidence: 99%

Characterization and Growth of TiO2/ZnO on PTFE Substrates at Different Volumetric Ratios Using Chemical Bath Deposition

et al. 2023

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“…This makes doped ZnO suitable for applications such as solar cells and photocatalysis [18,19]. Doping ZnO with group 4 elements can improve its structural stability [20,21]. Their substitution in the ZnO lattice allows these elements to more easily replace zinc due to their similar atomic size, resulting in reduced lattice strain and enhanced overall stability.…”

Section: Introductionmentioning

confidence: 99%

Properties of spray pyrolysis deposited Zr-doped ZnO thin films and their UV sensing properties

Alasmari,

Abd-Elraheem,

Aboud

et al. 2024

Phys. Scr.

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This study investigated the characteristics of Zr-doped ZnO thin films with varying Zr doping concentrations. X-ray diffraction (XRD) analysis confirmed the presence of the ZnO hexagonal phase without any additional phases detected. The crystallite size was determined using Scherrer’s equation and Halder-Wagner equation, revealing distinct trends as the Zr content increased. The impact of Zr doping concentration on structural properties such as lattice parameters was also explored. Field emission scanning electron microscopy (FESEM) images indicated agglomeration, with a peak value observed at Zr-5wt% of 175 nm that decreased at higher Zr contents. Optical properties exhibited minor variations with increasing Zr content, with the maximum band gap recorded at 3.28 eV for Zr-7wt% and Zr-10wt% films. Utilizing the Spitzer-Fan model, the high-frequency dielectric constant peaked at 14.26 for Zr-7wt% films. Optical mobility displayed fluctuations with rising Zr content. Direct current (DC) conductivity results unveiled two donor levels in the deposited films, showcasing minimum activation energies of 0.23 and 0.165 eV for high and low-temperature ranges in the Zr-3wt% film. Furthermore, the response to UV light illumination at a wavelength of 365 nm was examined, revealing notable changes in rise and decay times with varying Zr content. Overall, this comprehensive analysis sheds light on the intricate interplay between Zr doping concentrations and the physical properties of ZnO thin films, offering valuable insights for potential applications in various technological fields.

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“…The direct band gap of ZnO is about 3.37 eV [26,27] with a high binding energy of about 60 meV and an intrinsic n‐type conductivity [28] . Substitution chemistry was employed extensively to enhance the microstructural, optical, and electrical performances of ZnO [29,30] . Indeed, the choice of dopants depends on the required applications.…”

Section: Introductionmentioning

confidence: 99%

“…[28] Substitution chemistry was employed extensively to enhance the microstructural, optical, and electrical performances of ZnO. [29,30] Indeed, the choice of dopants depends on the required applications. It is well established that the physical characteristics of nanomaterials are affected by the size and morphology of nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu²⁺ and Li⁺ Co‐Substituted Wurtzite ZnO

Singh,

Kumar,

Singh

2023

ChemistrySelect

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Dielectric constants determine the level of miniaturization in capacitive components involved in electronic devices. Cu‐Li co‐doping is attempted to introduce the multiferroic relaxor nature of dielectricity and dilute magnetism in the bulk material simultaneously as Li+ ion substitution in ZnO lattice is known to form acceptor states within the band gap of ZnO and paramagnetic Cu2+ present in ZnO lattice can introduce dilute magnetism. Phase purity and substitution of Cu2+ and Li+ ions in ZnO lattice along with oxide‐ion vacancy formation was confirmed using Powder x‐ray diffraction (XRD), Scanning Electron Microscope (SEM), and Energy Dispersive X‐ray analysis (EDX), X‐ray Photoelectron Spectroscopy (XPS), Inductively Coupled Plasma Mass Spectrometry (ICP‐MS) and Magnetic property measurement system (MPMS) studies. The dielectric constant (ϵr′) of bulk pristine Zn0.92Cu0.05Li0.03O and Zn0.9Cu0.05Li0.05O is found to be 18000 and 20000 respectively at 1000 Hz frequency at 600 °C. Both dielectric constant and dielectric loss were decreasing with increasing frequencies. The increase in dielectric constant (ϵr′) with increasing temperatures at different frequencies for Zn0.92Cu0.05Li0.03O1‐δ and Zn0.9Cu0.05Li0.05O1‐δ is likely due to the localized nature of hopping charge carriers in addition to interfacial polarization due to space charge. Tm was found to increase with increasing frequencies suggesting the relaxor nature of dielectricity in the Zn0.9Cu0.05Li0.05O1‐δ. Bulk pristine Zn0.9Cu0.05Li0.05O1‐δ also exhibits ferroelectricity at room temperature with remnant polarization Pr and Vc equal to 4.20e–02 μC/cm2 and 4.1e+03 V/cm at (30KV, 500 Hz) respectively. Zn0.9Cu0.05Li0.05O also shows the paramagnetic behaviour.

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Effect of titanium doping on conductivity, density of states and conduction mechanism in ZnO thin film

Cited by 17 publications

References 50 publications

Characterization and Growth of TiO2/ZnO on PTFE Substrates at Different Volumetric Ratios Using Chemical Bath Deposition

Characterization and Growth of TiO2/ZnO on PTFE Substrates at Different Volumetric Ratios Using Chemical Bath Deposition

Properties of spray pyrolysis deposited Zr-doped ZnO thin films and their UV sensing properties

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu²⁺ and Li⁺ Co‐Substituted Wurtzite ZnO

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Effect of titanium doping on conductivity, density of states and conduction mechanism in ZnO thin film

Cited by 17 publications

References 50 publications

Characterization and Growth of TiO2/ZnO on PTFE Substrates at Different Volumetric Ratios Using Chemical Bath Deposition

Characterization and Growth of TiO2/ZnO on PTFE Substrates at Different Volumetric Ratios Using Chemical Bath Deposition

Properties of spray pyrolysis deposited Zr-doped ZnO thin films and their UV sensing properties

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu2+ and Li+ Co‐Substituted Wurtzite ZnO

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Product

Resources

About

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu²⁺ and Li⁺ Co‐Substituted Wurtzite ZnO