Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices

Voitovych, Vasyl; Rudenko, R.M.; Kolosiuk, Andrii; Kras'ko, M.; Juhimchuk, V. O.; Voitovych, Mykhailo V.; Ponomarov, S. S.; Kraitchinskii, A.; Povarchuk, V. Yu.; Макара, В. А.

doi:10.1134/s1063782614010242

Cited by 10 publications

(10 citation statements)

References 19 publications

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“…The doping concentration of Sn-doped Si was around 1 at.%, which was suggested by Voitovych. 10 During the deposition process, the working gas (Ar) pressure was held at 2.9 × 10 −1 Pa, the substrate temperature was kept at 400 • C and the radio frequency (RF) power for Si 3 N 4 and Si targets were kept constant at 80 W and 150 W, respectively. Meanwhile, undoped SRN films were fabricated under the same deposition conditions for comparison.…”

Section: Methodsmentioning

confidence: 99%

“…Similar Raman features have been discovered in the earliest studies of P-doped SRN films 8 and Sn-doped SiO x films. 10 The sizes of Si quantum dots (QDs) can be estimated according to the relationship between Raman shifts and particle sizes 14 :…”

Section: Methodsmentioning

confidence: 99%

“…5,8,9 Wu et al 8 showed that the crystallization temperature could be lowered when adding phosphorus. Voitovych et al 10 reported that Sn impurity could speed up formation of Si-NCs and offer the possibility for improving the crystallization degree exemplified by a study of silicon oxide films containing Sn. However, to our knowledge, the effect of Sn doping on the formation of Si-NC in silicon nitride films has not been explored to any degree.…”

Section: Introductionmentioning

confidence: 98%

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Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Chen

Zhang

2015

Mod. Phys. Lett. B

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Sn-doped silicon nanocrystals (Si-NCs) embedded in silicon nitride was synthesized by post-annealing of silicon-rich silicon nitride (SRN) films deposited by co-sputtering. The effects of Sn impurity on the Si crystallization behavior and photoluminescence (PL) in SRN films were investigated. Doping with Sn dopants enhances phase separation in SRN and thus accelerates the crystallization of silicon nanoparticles. It was also found that the existence of Sn decreases crystallization temperature, and could be as low as 800 • C. In the Sn-doped samples, the crystalline volume fraction increases monotonically from 16.2% to 78.5% with increasing annealing temperature and the area densities of about ∼ 2.2 × 10 12 cm −2 can be achieved after annealing at 1100 • C. In addition, the intensity of PL of the SRN film could be enhanced by adding Sn impurity.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Chen

Zhang

2015

Mod. Phys. Lett. B

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“…For example, the radiative recombination in nc-Si, unlike that in c-Si, can be realized without the mandatory participation of phonons, as it occurs in direct-band semiconduc-tors [1]. Therefore, nanocrystalline silicon in the silicon suboxide (SiO ) matrix is used as a basis for the creation of light-emitting devices in the visible and near IR spectral intervals [2][3][4]. At the same time, amorphous-nanocrystalline silicon films serve as a basis for producing the highly efficient multilayer solar cells and so forth [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…The physical properties of thin silicon and silicon suboxide films depend to a large extent on the ratio between the numbers of particles of the amorphous and nanocrystalline phases, as well as on the size and concentration of silicon nanocrystals [2,3,[7][8][9]. Nanocrystalline inclusions are also believed to partially relieve mechanical stresses in the amorphous matrix, thus resulting in a possibility to form a less strained network with a fewer number of weak bonds, which is more robust to degradation under the action of external factors [6,7].…”

Section: Introductionmentioning

confidence: 99%

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

et al. 2020

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The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kras'ko

Kolosiuk

Voitovych

et al. 2021

Physica Status Solidi (a)

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Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistivity Cz n‐Si with P doping levels >5 × 1014 cm−3 containing in addition [Sn] ≈1017–1019 cm−3 has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn‐free n‐Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low‐resistivity Cz n‐Si:Sn.

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Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices

Cited by 10 publications

References 19 publications

Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

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Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices

Cited by 10 publications

References 19 publications

Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Effect ofSndoping on the formation of silicon nanocrystal in silicon nitride films

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

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Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness