2021
DOI: 10.1016/j.optmat.2021.110845
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Effect of Ti doping on structural, optical and electrical properties of SnO2 transparent conducting thin films deposited by sol-gel spin coating

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Cited by 30 publications
(20 citation statements)
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“…However, the values determined against U = 4.5 eV are found 6.524 Å and 10.595 Å along in-plane and out-of-plane axis, respectively. The values of cation-N i (where i represents different atoms) distance are found larger for the doped material and appeared consistently increasing with an increase in value of U [ 25 ]. Similarly, the values of Ti-Ga i distance are found larger for the doped material and appeared consistently increasing with an increase in the value of U.…”
Section: Resultsmentioning
confidence: 99%
“…However, the values determined against U = 4.5 eV are found 6.524 Å and 10.595 Å along in-plane and out-of-plane axis, respectively. The values of cation-N i (where i represents different atoms) distance are found larger for the doped material and appeared consistently increasing with an increase in value of U [ 25 ]. Similarly, the values of Ti-Ga i distance are found larger for the doped material and appeared consistently increasing with an increase in the value of U.…”
Section: Resultsmentioning
confidence: 99%
“…8. 87 The study revealed that the microstructures had grown homogeneously, and the doped Ti atoms were attached to the surface of the SnO 2 without diffusing into it. The doping % of Ti gradually increased, leading to a decrease in the size of the desired Ti-doped-SnO 2 nanostructures.…”
Section: Synthesis Of Tin Oxide and Tin-oxide-based Nanocompositesmentioning
confidence: 97%
“…Similarly, using the sol-gel spin coating technique, Sivakumar et al 87 synthesized Ti-doped SnO 2 to investigate its electrical and optical properties. The AFM micrographs obtained were used to study the surface morphology, shown in Fig.…”
Section: Synthesis Of Tin Oxide and Tin-oxide-based Nanocompositesmentioning
confidence: 99%
“…The lattice constants and unit cell volume show a decreasing trend with the increase of Ti doping concentration until 5 at % Ti-SnO 2 due to the relatively smaller ionic radius of Ti 4+ (0.61 Å) than that of Sn 4+ (0.69 Å). 29 The trend fluctuation for 6 at % Ti-SnO 2 is also considered as the result of lattice structure destruction due to excessive titanium doping. The lattice contraction of doped SnO 2 further confirmed the partial Sn 4+ ion replacement with the Ti 4+ ion.…”
Section: ■ Synthesis Processesmentioning
confidence: 99%
“…A similar phenomenon is observed by Costa 35 and Sivakumar. 29 In general, the tetragonal rutile structure has 18 vibrational modes, among which the vibrational modes of A 1g and B 2g are correlated with the symmetric stretching of Sn−O bonds, while the vibrational modes of E g are related to O−O bonds. 36 In Figure 1e, as the addition of Ti species increases, the Ramanactive A 1g vibrational mode showed a trend of first moving to the low frequency direction and then to the high frequency direction with 5 at % Ti-SnO 2 , which may be attributed to the Sn−O bond distortion originated from the increase of Ti element, which is in great consistency with the XRD results.…”
Section: Acs Sustainablementioning
confidence: 99%