2003
DOI: 10.1016/s0040-6090(02)00968-9
|View full text |Cite
|
Sign up to set email alerts
|

Effect of thickness on the thermoelectric properties of PbS thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

5
27
0

Year Published

2005
2005
2016
2016

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 33 publications
(32 citation statements)
references
References 18 publications
5
27
0
Order By: Relevance
“…But it should be noticed that experimental oscillation amplitudes in ddependences of thermoelectric parameters are much more large than the theoretical one. We consider that this difference has place because of assumption of infinite barrier height, what is confirmed by the data in [14], where for Te Eu PbTe/Pb x x 1− quantum wells it was found that energy barrier height reduction leads to increase of the thermoelectric power factor SP The authors [7,8] offer to determine a theoretical oscillation period value (ΔdB theor B ) for nanostructures, based on IV-VI compounds, using a known Fermi energy εB F B of single crystals. In our opinion, for nanostructures Fermi level is largely dependent on their topology and size, which, in turn, are determined by technological factors of growth.…”
Section: Discussionsupporting
confidence: 54%
See 2 more Smart Citations
“…But it should be noticed that experimental oscillation amplitudes in ddependences of thermoelectric parameters are much more large than the theoretical one. We consider that this difference has place because of assumption of infinite barrier height, what is confirmed by the data in [14], where for Te Eu PbTe/Pb x x 1− quantum wells it was found that energy barrier height reduction leads to increase of the thermoelectric power factor SP The authors [7,8] offer to determine a theoretical oscillation period value (ΔdB theor B ) for nanostructures, based on IV-VI compounds, using a known Fermi energy εB F B of single crystals. In our opinion, for nanostructures Fermi level is largely dependent on their topology and size, which, in turn, are determined by technological factors of growth.…”
Section: Discussionsupporting
confidence: 54%
“…Naturally, we assumed that this behavior is due to size effects in quantum well formed by the potential barrier on the edge of polyamide substrate and oxidative layer on the condensate surface (similar to the results of [7][8][9][10]). …”
Section: Discussionmentioning
confidence: 65%
See 1 more Smart Citation
“…Earlier we reported oscillatory dependence of the transport properties on the layer thickness d in n-PbTe, n-PbSe, and n-PbS epitaxial thin films (see, for example, [17][18][19][20][21], and we attributed this oscillatory behavior to QSEs due to electron confinement in the IV-VI QWs. It is also of great interest to conduct similar studies for lead chalcogenides with p-type conductivity.…”
Section: Introductionmentioning
confidence: 67%
“…Inhomogeneous thin film consisting of conducting and nonconducting constituents has been observed to exhibit an abrupt increase in electrical conductivity within a narrow thickness range, which is explained by percolation theory by some authors. 30 A sharp growth in carrier mobility and electrical conductivity is expected during the transition from island mode to continuous thin film. A detailed work constituting the dependence of TE properties on varying thickness of the Ca 3 Co 4 O 9 ultrathin film is ongoing.…”
Section: B Te Properties Of Cco and Cb02 Thin Filmsmentioning
confidence: 99%