Effect of thickness on the structural, optical and electrical properties of RF magnetron sputtered GZO thin films

Pugalenthi, A.S.; Balasundaraprabhu, R.; Gunasekaran, Vignesh; Muthukumarasamy, N.; Prasanna, S.; Jayakumar, S.

doi:10.1016/j.mssp.2014.02.014

Cited by 21 publications

(3 citation statements)

References 32 publications

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“…As expected from the ZnO (0 0 2) XRD peak positions, the calculated c-axis lattice spacing expands with increasing the atomic number of alloying elements, showing the well-matched trend with the ionic radii of the alloyed group-II elements. The grain size of the films was also derived by Debye-Scherrer formula [23] to confirm the correlation between crystallite size and structural quality:…”

Section: Resultsmentioning

confidence: 99%

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Lee

Cuong

Jeong

et al. 2015

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Lee

Cuong

Jeong

et al. 2015

Journal of Alloys and Compounds

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“…Corrosion-resistant to strong acids and alkalis Approx. 2.8-3.0 eV [25] Gallium-doped zinc oxide (GZO) High (80-90%) Good (10 −4 ∼ 10 2 Ω −1 cm −1 ) [26] Excellent…”

Section: Tco Materialsmentioning

confidence: 99%

Advancements in Transparent Conductive Oxides for Photoelectrochemical Applications

Wen,

Weng,

Wang

et al. 2024

Nanomaterials

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Photoelectrochemical cells (PECs) are an important technology for converting solar energy, which has experienced rapid development in recent decades. Transparent conductive oxides (TCOs) are also gaining increasing attention due to their crucial role in PEC reactions. This review comprehensively delves into the significance of TCO materials in PEC devices. Starting from an in-depth analysis of various TCO materials, this review discusses the properties, fabrication techniques, and challenges associated with these TCO materials. Next, we highlight several cost-effective, simple, and environmentally friendly methods, such as element doping, plasma treatment, hot isostatic pressing, and carbon nanotube modification, to enhance the transparency and conductivity of TCO materials. Despite significant progress in the development of TCO materials for PEC applications, we at last point out that the future research should focus on enhancing transparency and conductivity, formulating advanced theories to understand structure–property relationships, and integrating multiple modification strategies to further improve the performance of TCO materials in PEC devices.

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“…Superiority Ga:ZnO when used as dopant for n-type Zinc Oxide semiconductor is high oxidation resistance during deposition, exhibit better electronics stability in humidity also suitable for stabilization of ZnO lattice system [7][8][9]. In addition, to improve the electrical conductivity of Doped Zinc Oxide, the Zn 2+ ions replaced with other ions that have higher valence electrons to act as a shallow donor for example In 3+, Al 3+ and Ga 3+ and in this report, Ga 3+ is more favorable among others due to the Zn and Ga similar tetrahedral radii that would contribute to the small lattice distortion and minimal strain when the substitutions in doping process occur [10].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Ga:ZnO film deposited by RF magnetron sputtering

Shain

Mani

et al. 2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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This paper investigate the dependence of substrate temperature onto characteristic of Gallium doped Zinc Oxide (Ga:ZnO). Ga:ZnO films were deposited on a glass substrate by RF Magnetron Sputtering using Ga:ZnO ceramic target with 99.99% purity. Sputtering power, argon flow and target distance were fixed in order to investigate the influence of substrate temperature to the growth characteristic, structural and optical properties of the films. Sputtering was performed with RF power of 100 Watt and the argon flow in was set at 10 sccm. The deposition times were fixed at 40 minute for all films. The result shows growth rate for Ga:ZnO growth at higher temperature are lower than at room temperature. Ga:ZnO thin films on different substrate temperature were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency over 80 percent were achieved.

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Effect of thickness on the structural, optical and electrical properties of RF magnetron sputtered GZO thin films

Cited by 21 publications

References 32 publications

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Comparative study of group-II alloying effects on physical property of ZnGaO transparent conductive films prepared by RF magnetron sputtering

Advancements in Transparent Conductive Oxides for Photoelectrochemical Applications

Temperature dependence of Ga:ZnO film deposited by RF magnetron sputtering

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