Abstract:1% La doped BaSnO3 thin films of different thicknesses, ranging from 15 to 300 nm, were obtained on single crystal Lanthanum Aluminate-Strontium Aluminate Tantalate [LSAT(001)] substrates via Pulsed Laser Deposition. The films grow epitaxially on these substrates (cube-on-cube epitaxy) and are almost relaxed with a strain of ≈0.51% for 300 nm films. All films show n-type conducting behavior with their conductivity varying from 65.36 S cm−1 to 465.11 S cm−1 as the thickness of the film is increased. Low tempera… Show more
“…Similar saturation behavior for the room temperature carrier mobility and density with increasing thickness has been observed elsewhere. 36,57,58 The critical thickness here is only half of the reported tC (~ 400 nm) in literature. 36 The structural defects including TDs not only act as scattering sources but also as trap centers for charges, which can decrease the carrier mobility and density simultaneously.…”
As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition.However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm 2 V -1 s -1 at the carrier density ~ 4.0 ×10 20 cm -3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 ×10 20 cm -3 ), the electron mobility value of 121 cm 2 V -1 s -1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.
“…Similar saturation behavior for the room temperature carrier mobility and density with increasing thickness has been observed elsewhere. 36,57,58 The critical thickness here is only half of the reported tC (~ 400 nm) in literature. 36 The structural defects including TDs not only act as scattering sources but also as trap centers for charges, which can decrease the carrier mobility and density simultaneously.…”
As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition.However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm 2 V -1 s -1 at the carrier density ~ 4.0 ×10 20 cm -3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 ×10 20 cm -3 ), the electron mobility value of 121 cm 2 V -1 s -1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics.
“…At low temperatures, λ F and l are estimated to be comparable. Hence, the semiclassical Boltzmann equation of resistivity is taken into consideration to fit the experimental data as described by the following relationship [ 54 – 56 ]: Fig. 5 Temperature dependence of resistivity for the SSNO films grown at various oxygen pressures ( a ) and various substrate temperatures ( b ).…”
Nb-doped SrSnO
3
(SSNO) thin films were epitaxially grown on LaAlO
3
(001) single-crystal substrates using pulsed laser deposition under various oxygen pressures and substrate temperatures. The crystalline structure, electrical, and optical properties of the films were investigated in detail. X-ray diffraction results show that the cell volume of the films reduces gradually with increasing oxygen pressure while preserving the epitaxial characteristic. X-ray photoelectron spectroscopy analysis confirms the Nb
5+
oxidation state in the SSNO films. Hall-effect measurements were performed and the film prepared at 0.2 Pa with the 780 °C substrate temperature exhibits the lowest room-temperature resistivity of 31.3 mΩcm and Hall mobility of 3.31 cm
2
/Vs with a carrier concentration at 6.03 × 10
19
/cm
3
. Temperature-dependent resistivity of this sample displays metal-semiconductor transition and is explained mainly by electron-electron effects. Optical transparency of the films is more than 70% in the wavelength range from 600 to 1800 nm. The band gaps increase from 4.35 to 4.90 eV for the indirect gap and 4.82 to 5.29 eV for the direct by lowering oxygen pressure from 20 to 1 × 10
−3
Pa, which can be interpreted by Burstein-Moss effect and oxygen vacancies generated in the high vacuum.
“…Furthermore, the performance of SVO thin films is sensitive to oxygen pressure [ 77 , 79 , 85 ]. In general, SVO is grown under low oxygen pressure, which is different from other strongly correlated perovskite materials, such as LaNiO 3 and SrRuO 3 grown under high oxygen pressure conditions [ 86 – 88 ].…”
Traditional transparent conducting oxides (TCOs) have been widely used for various optoelectronic applications, but have the trade-off between conductivity and transmittance. Recently, perovskite oxides, with structural and chemical stability, have exhibited excellent physical properties as new TCOs. We focus on SrVO3-based perovskites with a high carrier concentration and BaSnO3-based perovskites with a high mobility for n-type TCOs. In addition, p-type perovskites are discussed, which can serve as potential future options to couple with n-type perovskites to design full perovskite based devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
