Effect of thickness and heat treatment on the electrical and optical properties of (Ge2S3)1(Sb2Se3)1 thin films

El-Wahabb, E. Abd; El-Samanoudy, M. M.; Fadel, M.

doi:10.1016/s0169-4332(00)00911-9

Cited by 17 publications

(11 citation statements)

References 26 publications

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“…From the figure it could seen that the absorption coefficient decreases with increasing in film thickness and the absorption edge shifts to lower values of energy with increase in film thickness. The same behavior was previously reported for FeS 2 for thickness ≥ 130 nm [26], for InSe films having thickness > 80 nm [23], for (Ge 2 S 3 ) 1 (Sb 2 Se 3 ) 1 [25] and for Se 85 Te 15 films [27]. This was attributed to an increased proportion of bulk defects in thicker films [26] and to a low transition probability of carriers [23].…”

Section: Resultssupporting

confidence: 84%

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Local field correction as a cause for the optical parameters change with thickness in Ge-Se-Te films

Bakry

El‐Korashy

2013

2013 Saudi International Electronics, Communications and Photonics Conference

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Thin films of Ge 30 Se 50 Te 20 with thickness of 100, 150, 200 and 250 nm were prepared by thermal evaporation technique on glass substrates. Normal-incidence optical transmission spectra have been measured in the range from 190 to 900 nm. The optical constants were calculated using Swanepoel's method. The effect of film thickness on the optical constants had been investigated. Analysis of the refractive index (n) yields the values of the high frequency dielectric constant, Wemple's single oscillator energy E w , dispersion energy E d , the oscillator wavelength, the average oscillator strength (S o ) and carrier concentration N/m* at different thickness. Optical absorption measurements showed that fundamental absorption edge is a function of the film thickness. The optical gap energy E g is determined. The variation of the optical constants with film thickness was reported. The results are interpreted using the local field correction theory.

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Section: Resultssupporting

confidence: 84%

“…Studies for the dependence of optical parameters on film thickness for chalcogenide glasses have been reported by various researchers [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Unfortunately not much was reported for this kind of study on GeSeTe system [13].…”

Section: Introductionmentioning

confidence: 99%

Local field correction as a cause for the optical parameters change with thickness in Ge-Se-Te films

Bakry

El‐Korashy

2013

2013 Saudi International Electronics, Communications and Photonics Conference

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“…An electronic transition between localized states in the band edge tails is valid in this compound. The exponential dependence of the optical absorption coefficien with photon energy may arise from the electronic transitions between the localized states, which tail off in the band gap [10].…”

Section: Optical Propertiesmentioning

confidence: 99%

A small-molecule organic semiconductor

et al. 2004

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The electrical conductivity and optical properties of the bis-diethylaminokumarin have been investigated. The electrical conductivity of the compound exhibited three-dimensional hopping conduction in the temperature range 295−321 K. The compound shows typical semiconductor property and its semiconducting property results from delocalization of the π-electrons in the structure. To determine the optical band gap of the compound, an optical absorption study was made in the wavelength range 250−600 nm. The optical study revealed that the optical transition is the allowed indirect one. The electronic parameters such as electrical conductivity at room temperature σ 25 , activation energy E, and optical band gap Eg , of the compound are 1.46 · 10 −5 S/cm, 0.42 eV and 2.46 eV, respectively. These values are in agreement with electronic parameters of organic semiconductors.

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“…The electrical conductivity of Ge-M-S (M = Bi or Sb) was the subject of many investigations [2][3][4][5][6][7]. Various mechanisms of conductivity in bulk and thin films of Ge x Sb 40−x Se 60 chalcogenides system have been suggested [3].…”

Section: Introductionmentioning

confidence: 99%

Electrical conductivity and optical absorption of (Ge2S3)1(Sb2Te3)1 amorphous thin films

El-Wahabb¹,

Farid²

2009

Journal of Alloys and Compounds

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Effect of thickness and heat treatment on the electrical and optical properties of (Ge2S3)1(Sb2Se3)1 thin films

Cited by 17 publications

References 26 publications

Local field correction as a cause for the optical parameters change with thickness in Ge-Se-Te films

Local field correction as a cause for the optical parameters change with thickness in Ge-Se-Te films

A small-molecule organic semiconductor

Electrical conductivity and optical absorption of (Ge2S3)1(Sb2Te3)1 amorphous thin films

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