Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics

Chang, Yu‐Min; Chang, Wei-Yao; Huang, Jun-Fu; Leu, Jihperng; Cheng, Yi-Lung

doi:10.1016/j.tsf.2012.09.088

Cited by 20 publications

(13 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The dense low-k dielectric films without the HfO 2 capping layer have a higher leakage current density than the porous low-k dielectric films without such a layer, but a higher dielectric breakdown electric-field. This result implies that the porosity does not significantly affect the leakage current in low-k dielectric films, but the bonding structure does [15]. However, the porosity in the low-k dielectric film affects dielectric breakdown by providing a conducting path, reducing the dielectric breakdown electric-field.…”

Section: Resultsmentioning

confidence: 92%

Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Cheng

Kao

Huang

et al. 2015

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 92%

Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Cheng

Kao

Huang

et al. 2015

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

“…The dense low-k dielectric films without the HfO 2 capping layer have a higher leakage current density than the porous low-k dielectric films without such a layer, but a higher dielectric breakdown electric-field. This result implies that the porosity does not significantly affect the leakage current in low-k dielectric films, but the bonding structure does [11]. However, the porosity in the low-k dielectric film affects dielectric breakdown by providing a conducting path, reducing the dielectric breakdown electricfield.…”

Section: Bd12mentioning

confidence: 92%

Electrical and reliability performance of atomic layer deposition HfO<inf>2</inf> capping layer on porous low dielectric constant materials

Kao

Huang

et al. 2015

2015 IEEE International Reliability Physics Symposium

Self Cite

View full text Add to dashboard Cite

This work proposes a new method for improving the characteristics of porous low-k dielectric film by capping it with an HfO 2 film by atomic layer deposition (ALD). Experimental results revealed that capping a porous low-k dielectric film with a ~1.0 nm-thick HfO 2 film increases its dielectric constant from 2.56 to 2.65 because the pores in the surface of the film are sealed by Hf precursors. The leakage current density and reliability of the porous low-k dielectrics are greatly improved. The HfO 2 capping film also increased resistances against Cu diffusion and damage by oxygen plasma. Therefore, this ALD-deposited HfO 2 capping film can be used as a pore-sealing layer and a Cu barrier layer for the porous low-k dielectric film in the future advanced technologies.

show abstract

“…Porous low-k dielectric materials can be produced by either spin-on technology or chemical vapor deposition (CVD) method [14,15,[17][18][19][20]. In the CVD method, the deposition rate of CVD method is strongly dependent of the deposition temperature.…”

Section: Deposition Methods For Porous Low-k Materialsmentioning

confidence: 99%

“…The air has a minimum k value of $1.0 in the world; as a result, the introduction of air pores in the existing low-k dielectric film is the possible strategy to further reduce the k value. The produced low-k dielectrics are porous, which are called "porous low-k dielectrics" [14,15]. The k value of porous low-k dielectrics depends on the porosity and dielectric constant of the film skeleton (k 2 ) [16]:…”

Section: Gate and Interconnect Delay With Technological Generation (Imentioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

Self Cite

View full text Add to dashboard Cite

To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

show abstract

Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics

Cited by 20 publications

References 13 publications

Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Electrical and reliability performance of atomic layer deposition HfO<inf>2</inf> capping layer on porous low dielectric constant materials

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Contact Info

Product

Resources

About