Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition

Afanas'ev, V. P.; Gudovskikh, A. S.; Неведомский, В. Н.; Sazanov, A. P.; Ситникова, А. А.; Трапезникова, И. Н.; Terukov, E. I.

doi:10.1134/1.1453445

Cited by 5 publications

(6 citation statements)

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“…Films of amorphous hydrogenated silicon ( a -Si:H) with nanocrystalline ( nc -Si) inclusions nowadays attract considerable attention [1][2][3][4][5][6]. This interest is due to the high photosensitivity of a -Si:H 〈 nc -Si 〉 films compared with homogeneous hydrogenated films [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…This interest is due to the high photosensitivity of a -Si:H 〈 nc -Si 〉 films compared with homogeneous hydrogenated films [1][2][3][4]. It is assumed that nanocrystalline inclusions partially relieve mechanical stresses in an amorphous matrix, thus opening the way to formation of less a strained network with a lower concentration of weak bonds, which is less subject to degradation.…”

Section: Introductionmentioning

confidence: 99%

“…Earlier [4,9], we demonstrated the successful use of a cyclic method for fabricating a -Si:H 〈 nc -Si 〉 films with improved photosensitivity and stability. The method consists in periodic alternation of cycles of deposition of a -Si:H thin films and their annealing in hydrogen plasma.…”

Section: Introductionmentioning

confidence: 99%

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TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

Afanasiev¹

2004

Semiconductors

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Transmission electron microscopy has been used to investigate the formation and modification of the nanocrystalline silicon ( nc -Si) phase in thin a -Si:H films. The films were produced by three different methods: plasmochemical deposition of a-Si:H, cyclic plasmochemical deposition with intermediate annealing of layers 10-20 nm in thickness in hydrogen plasma, and plasmochemical deposition of a -Si:H with the annealing of 40-nm-thick films in hydrogen plasma. In the films produced by cyclic deposition with intermediate annealing in hydrogen plasma and subsequent thermal treatment at 750 ° C for 30 min, the size of nanocrystallites does not exceed the thickness of a layer deposited in a cycle. In contrast, in uniform films with similar thermal treatment, crystallites may be as large as 1 µ m or more. Models that account for the effects observed are suggested. These models are validated by calculating profiles of hydrogen diffusion in a -Si:H film after annealing in hydrogen plasma and thermal treatment in vacuum. © 2004 MAIK "Nauka/Interperiodica". nmFig. 1. Cross-sectional TEM image of a -Si:H film produced by cyclic deposition.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

Afanasiev¹

2004

Semiconductors

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“…Hydrogen begins to leave the a-Si:H films under vacuum annealing at the temperature above 200°C and it has a maximum in the effusion spectra in the range of 400-600°C (depending on deposition conditions) [9]. Moreover, in our 0.5 lm LBL a-Si:H films after annealing at 500°C during 1 h the hydrogen content was less than 1% [10]. It means that during annealing at 750°C almost all hydrogen atoms leave the 30-40 nm films.…”

Section: Discussionmentioning

confidence: 89%

Investigation of nc-Si inclusions in multilayer a-Si:H films obtained using the layer by layer technique

Gudovskikh

Kleider

Afanasjev

et al. 2004

Journal of Non-Crystalline Solids

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“…Such alloys are prepared using various methods and under various technological regimes. For the films of hydrogenated amorphous silicon, -Si:H, grown by the method of cyclic deposition with an annealing in hydrogen plasma, the Staebler-Wronski effect is weakly pronounced [1]. The authors of work [2] mark the actual absence of this effect in nanostructured -Si:H films.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of Thin Hydrogenated α-Si1–xGex:H (x = 0÷1) Films Produced by Plasma Chemical Deposition Technique

Najafov¹,

Dadashova²

2014

Ukr. J. Phys.

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Possibilities of plasma chemical deposition of-Si1− Ge :H (= 0÷1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in-structures of solar cells. The optical, electric, and photo-electric properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in-Si:H and-Ge:H films is measured. The photoconductivity is calculated using the formula ph = with = 1. The hydrogen concentration H in the films is characterized by the preferable additional parameter and was determined with the use of the vibrational stretching and wegging modes for the-Si1− Ge :H (= 0÷1) films. The-Si:H and-Si0.88Ge0.12:H films were used to fabricate three-layer solar cells with an element area of 1.3 cm 2 and an efficiency of 9.5%. K e y w o r d s: thin hydrogenated films, plasma chemical deposition, photoconductivity.

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Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition

Cited by 5 publications

References 5 publications

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

Investigation of nc-Si inclusions in multilayer a-Si:H films obtained using the layer by layer technique

Optoelectronic Properties of Thin Hydrogenated α-Si1–xGex:H (x = 0÷1) Films Produced by Plasma Chemical Deposition Technique

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