Abstract:Mn
x
Ga
thin films (1.64 ≤ x ≤ 2) were grown
at room temperature by molecular
beam epitaxy on the native SiO2 layer of Si(100) commercial
wafers. After growth, Mn
x
Ga films were
thermally annealed at different temperatures (200, 300, and 400 °C).
The X-ray diffraction results reveal D022-Mn2Ga as the main phase and an improvement of the crystalline quality
as a function of the annealing temperature. The samples were also
investigated using X-ray photoelectron spectroscopy, atomic force
microscopy, and vibrati… Show more
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