Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at 720 • C and oxygen pressure pO 2 = 1 − 25 Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO2 as a secondary phase could be avoided for pO 2 ≥ 8 Pa. However, transmission electron microscopy shows the presence of CeO2 nanoclusters, even in those films which appear to be single phase in XRD. With O2 annealing, the metal-toinsulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La0.7Ce0.3MnO3 with mixed Mn 3+ /Mn 2+ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-toinsulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn 3+ and Mn 4+ , and only a small amount of Mn 2+ ions can be observed by XAS. Mn 2+ and Ce 4+ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.