2020
DOI: 10.1017/s1551929519001196
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Effect of the Silicon Drift Detector on EDAX Standardless Quant Methods

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Cited by 12 publications
(4 citation statements)
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“…The MThin models were set up to account for absorption and material density using the default Zaluzec option, and then run assuming constant sample thicknesses of 0.5 μm, 0.75 μm, and 1 μm to establish general trends. More information about these models can be found in references [17] and [18], respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The MThin models were set up to account for absorption and material density using the default Zaluzec option, and then run assuming constant sample thicknesses of 0.5 μm, 0.75 μm, and 1 μm to establish general trends. More information about these models can be found in references [17] and [18], respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The acquisition time for each EDS spectrum was no <10 minutes. The EDS characteristic spectra were analyzed by the standardless eZAF method 30 for semiquantitative compositional analysis. The atomic number correction factor (Z), absorption correction factor (A), secondary fluorescence correction factor (F), and total error (Err %) are provided in Table S1.…”
Section: Methodsmentioning
confidence: 99%
“…Measurements were acquired by either an EDAX Apollo XV detector or an EDAX Octane Elect EDS System mounted on a Zeiss Ultra55 field-emission scanning electron microscope (SEM) operated at 6.5 kV. The EDX quantification process was performed using the standardless eZAF algorithm provided by EDAX [17]. The composition analysis of (In, Ga)As nanowires was complemented by the utilization of scanning transmission electron microscopy (STEM) with high-resolution energy-dispersive x-ray spectroscopy (EDX).…”
Section: Characterizationmentioning
confidence: 99%