Effect of the particle size of conductive inclusions on the structurization and resistivity of Si3N4–ZrC ceramics

Brodnikovska, I. V.; Soltis, M. V.; Кириленко, Катерина Всеволодівна; Zvorskii, I. V.; Petrovskii, V. Ya.

doi:10.1007/s11106-012-9433-2

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…Microminiaturization of electro technical devices leads to the development of the functionally graded materials (multilayer ceramic devices) -monolithic ceramic bodies with conductive and dielectric layers made by appropriate tapes and sintered together in one step [1]. They can serve as Multi-Chip Modules (MCM-C) (especially HTCC) or composite heating systems (Gradient, Ukraine [2], Fig.…”

Section: Introductionmentioning

confidence: 99%

Development of AlN ceramic composites for multilayer ceramic devices

Brodnikovska¹,

Deriy²,

Petrovsky³

2014

Epitoanyag - JSBCM

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Development of Aln ceramic composites for multilayer ceramic devices iryna v. BRoDNIkoVSkA § Frantsevich institute for Problems of materials science of nAsu, krzhizhanivsky str. 3, 03680, kyiv, ukraine andriy i. DERIy § Frantsevich institute for Problems of materials science of nAsu, krzhizhanivsky str. 3, 03680, kyiv, ukraine vitaly ya. PETRoVSky § Frantsevich institute for Problems of materials science of nAsu,

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Section: Introductionmentioning

confidence: 99%

Development of AlN ceramic composites for multilayer ceramic devices

Brodnikovska¹,

Deriy²,

Petrovsky³

2014

Epitoanyag - JSBCM

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A novel thermally matched conductive phase of silicon nitride ceramics

Wang

Zheng

et al. 2023

Journal of Physics and Chemistry of Solids

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Broadband dielectric response of AlN ceramic composites

Brodnikovska

Deriy

Petrovsky

2014

PAC

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Aluminium nitride (AlN) is considered as a substrate material for microelectronic applications. AlN ceramic composites with different amount of TiO2 (up to 4 vol.%) were obtained using hot pressing at different sintering temperature from 1700 to 1900 ?C. It was shown that milling of the raw AlN powder has strongly influence on sintering and improves densification. Broadband dielectric spectroscopy was used as a nondestructive method for monitoring of the ceramic microstructures. TiO2 additive affects the key properties of AlN ceramics. Thus, porosity of 0.1%, dielectric permeability of ? = 9.7 and dielectric loss tangent of tan? = 1.3?10-3 can be achieved if up to 2 vol.% TiO2 is added.

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Effect of the particle size of conductive inclusions on the structurization and resistivity of Si3N4–ZrC ceramics

Cited by 3 publications

References 20 publications

Development of AlN ceramic composites for multilayer ceramic devices

Development of AlN ceramic composites for multilayer ceramic devices

A novel thermally matched conductive phase of silicon nitride ceramics

Broadband dielectric response of AlN ceramic composites

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