Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems

The nonlinear optical absorption and corrections to the refractive index in a GaAs n‐type delta‐doped field effect transistor under hydrostatic pressure

“…Therefore, it can be used as a tool physica for a suitable modification of the charge carrier densities. This was confirmed in the study of the influence of hydrostatic pressure in delta-doped-based structures [27][28][29]. For instance, in the latter of these three references, we were able to show via a simple relation involving only the pressuredependent conduction effective mass and dielectric constant, that the two-dimensional carrier density in a single isolated GaAs n-type delta-doped quantum well increases with the value of the hydrostatic pressure.…”

Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

“…The δ − doping semiconductors' quantum wells are very important for designing various optoelectronic devices based on optical intersubband transitions. Many research works have been developed theoretically and experimentally to investigate the behavior of optical properties in quantum wells, quantum wires and quantum dots [13][14][15][16][17][18][19][20][21][22][23][24][25]. Majority of provided results indicate that various factors such as δ − doping concentration, temperature, applied external electric field and hydrostatic pressure affect the electronic and optical properties of these semiconductor materials.…”

High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

“…For instance, some years ago the energy level structure of a single ‐doped quantum well was reported as a function of the hydrostatic pressure considering the –X crossover that occurs in GaAs when pressure goes beyond 13 kbar (). There are also studies of the effect of hydrostatic pressure on the excitonic spectrum of single ‐doped systems () and in the optical and transport properties for ‐doped structures . It is well known that the Fermi level is pinned by surface states as reported in references and it depends, for metal–semiconductor contacts, of the presence of metal‐induced gap states (MIGS).…”