Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO2 matrix formed by ion implantation

Komoda, Tsugikazu; Kelly, James; Gwilliam, R.; Hemment, P.L.F.; Sealy, B.J.

doi:10.1016/0168-583x(95)01002-5

Cited by 24 publications

(11 citation statements)

References 10 publications

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“…This type of time dependence of the number of nanoparticles of small (2 nm) and large (16 nm) sizes results in F(R) transformation from the usual Gaussian function to a bimodal curve when the annealing time is increased from 15 to 120 min. This effect is accompanied with a spectral shift of the photoluminescence bands, which, in the opinion of the authors of some works [2,3], was in a fair agreement with the time dependence of the size of light-emitting nanoclusters.…”

supporting

confidence: 75%

“…In view of the above, it is important to study the factors that under various conditions define the function of the size distribution of the quantum dots F(R). The problem is that, as indicated by analysis of the experimental data available up to now [2,3,7], silicon nanoparticles in high-concentration solutions are formed according to a scenario which in some respects differs from that described by the wellknown coalescence model [8,9].…”

mentioning

confidence: 99%

“…The first maximum of the g 2 (R 12 ) dependence for the interpretation proposed corresponds to such a size that smaller inclusions of the second phase are thermodynamically unfavorable. This size is determined by the maximum level of supersaturation and can be assessed using equation (3). If we assume that α ≈ (4⋅10 2 -10 3 ) erg/cm 2 , T = 1150°C, while N ~ 10 22 cm -3 and N 0 ~ 2⋅10 16 cm -3 , which corresponds to typical experimental situations, we obtain R C ≈ 3 nm.…”

mentioning

confidence: 99%

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Multimodal size distribution of Si nanoclusters in SiO2 as manifestation of interaction in the space of sizes

Blonskiy¹,

Lev²

1998

Semicond. Phys. Quantum Electron. Optoelectron.

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This paper summarizes the results of experimental studies revealing a multimodal character of the function of size distribution of Si nanoclusters in light-emitting SiO 2 :Si structures. To explain the nature of this multimodality, a «liquid» approach to the description of the coalescence stage based on taking into account the correlation effects caused by particle-particle interactions in the space of sizes is proposed. This approach is justified by a high concentration of solutions where the nuclei of the new phase are described by a multimodal function of size distribution.

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supporting

confidence: 75%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Multimodal size distribution of Si nanoclusters in SiO2 as manifestation of interaction in the space of sizes

Blonskiy¹,

Lev²

1998

Semicond. Phys. Quantum Electron. Optoelectron.

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“…The temperature held under the generation of Si nanocrystals was 950 °C, and their size was estimated as 4.3 nm [85]. In case of the creation of Si nanocrystals in dioxide by the Si + ion implantation and the high-temperature annealing at 1200 °C for 15 min, the effect of the RF plasma treatment on the PL intensity related to the exciton recombination in the nanocrystals was sufficiently visible (more than 3-fold enhancement) [10] and exceeded that under the thermal annealing in a forming gas at 450 °C [86] but was not such significant as in the above-mentioned case. At the same time, no increase of the PL intensity for amorphous Si inclusions that was obtained by the 700 ºC-annealing of a SiO x film deposited on a Si wafer by thermal evaporation of SiO in vacuum was observed [11].…”

Section: Effect Of Rf Plasma Treatment On Nanostructured Oxidementioning

confidence: 99%

Untitled

2008

Semicond. phys. quantum electron. optoelectron.

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The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro-and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO 2-Si interface and SiO 2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.

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“…Esta passivação é mais efetiva para as amostras preparadas a baixas T a sugerindo que a concentração de DBs é maior na fase amorfa. Estudo detalhado em filmes de Si amorfo mostra que difusão do H 2 não é fator limitante para passivação até mesmo a temperaturas de tratamento de 500 °C 184,215. Figura 51 -a) Valor médio das taxas de decaimento para energia de detecção E det = 1,63 eV em função da T a para as amostras tratadas sob atmosfera de Ar (círculos cheios) e Ar+5%H 2 (círculos vazios).…”

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Éxcitons em nanocristais de silício

Gonzalez¹

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Aos meus pais, irmãos, e a toda minha família que, com muito, carinho e apoio, não mediram esforços para que eu chegasse até esta etapa de minha vida atingida a 4.378 km de distância longe de casa, em Caracas, Venezuela. À minha noiva Yulmaris Zambrano que com amor e paciência infinita tem me esperado por muito tempo desde tão longe. Ao Prof. Dr. Francisco Eduardo Gontijo Guimarães pela paciência na orientação e incentivo, amizade e confiança nestes últimos três anos e meio que tornaram possível a conclusão desta tese. Ao Prof. Dr. David Comedi, pela grande colaboração, apoio e participação ativa neste trabalho. Ao Prof. Dr. Luiz Antonio de Oliveira Nunes, pela ajuda nas medidas resolvidas no tempo. Ao Dr. Marcello Rubens Barsi Andreeta, pela ajuda nas medidas Raman. Ao Prof. Dr. Tomaz Catunda, pela recepção quando cheguei a São Carlos e pela paciência no meu primeiro ano no IFSC. Aos ex-colegas do IFSC, Edson, Giovanni, Leonardo, pela grande e bonita amizade e pelas interessantes discussões nas horas do café. Aos colegas do IFSC, Angelo, Mike, Danilo, Nirton, Tsutae, Haroldo, Regina pelo incentivo e pelo apoio constante. Ao Prof. Dr. Arístides Marcano, pelo incentivo para fazer o doutorado no Brasil. Ao Renato Antonio Cruz, pela valiosa ajuda muito antes de eu chegar ao Brasil, trocando emails. Às funcionarias da biblioteca e da secção de pós-graduação do IFSC pelo sempre atencioso e simpático atendimento. Aos meus amigos da comunidade estrangeira em São Carlos, Yovana, Kelly, Andrés (mexicano), Pilar. Obrigado vocês pelo convívio na alegria e na tristeza. Ao CNPq-TWAS pelo apoio financeiro. À todos, que direta ou indiretamente contribuíram de alguma forma na realização deste trabalho. À todos que de alguma forma passaram pela minha vida e contribuíram para a construção de quem sou hoje.

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Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO2 matrix formed by ion implantation

Cited by 24 publications

References 10 publications

Multimodal size distribution of Si nanoclusters in SiO2 as manifestation of interaction in the space of sizes

Multimodal size distribution of Si nanoclusters in SiO2 as manifestation of interaction in the space of sizes

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Éxcitons em nanocristais de silício

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